IXDH30N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage IGBT with optional Diode

High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 30N120
IXDH 30N120 D1
IXDT 30N120
IXDT 30N120 D1
V_CES = 1200 V
I_C25
= 60 A
V = _{CE(sat) typ} 2.4 V
C
G
C
G
TO-247 AD (IXDH)
E
E
IXDH 30N120 IXDH 30N120 D1
IXDT 30N120 IXDT 30N120 D1
G
C
E
TO--268 AA (IXDT)
C (TAB)
Symbol
Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
RBSOA
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 20 kW
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 90°C, t_p = 1 ms
V_GE = ±15 V, T_J = 125°C, R_G = 47 W
Clamped inductive load, L = 30 µH
t_SC
(SCSOA)
P_C
V_GE = ±15 V, V_CE = V_CES, T_J = 125°C
R_G = 47 W, non repetitive
T_C = 25°C
IGBT
Diode
T_J
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
60
A
38
A
76
A
I_CM = 50
A
V_CEK < V_CES
10
µs
300
W
135
W
-55 ... +150
°C
-55 ... +150
°C
300
°C
1.1/10 Nm/lb.in.
6
g
Symbol
V
(BR)CES
V_GE(th)
I_CES
I
GES
V
CE(sat)
Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V =0V
GE
I_C = 1 mA, V_CE = V_GE
V_CE = V_CES
T_J = 25°C
T_J = 125°C
V = 0 V, V = ± 20 V
CE
GE
I = 30 A, V = 15 V
C
GE
1200
V
4.5
6.5 V
1.5 mA
2.5
mA
± 500 nA
2.4
2.9 V
G
E
C (TAB)
G = Gate,
C = Collector ,
E = Emitter
TAB = Collector
Features
q _{NPT IGBT technology}
q _{low saturation voltage}
q _{low switching losses}
q _{square RBSOA, no latch up}
q _{high short circuit capability}
q _{positive temperature coefficient for}
easy paralleling
q _{MOS input, voltage controlled}
q _{optional ultra fast diode}
q _{International standard packages}
Advantages
q _{Space savings}
q _{High power density}
q _IXDT:
surface mountable high power package
Typical Applications
q _{AC motor speed control}
q _{DC servo and robot drives}
q _{DC choppers}
q _{Uninteruptible power supplies (UPS)}
q _{Switch-mode and resonant-mode}
power supplies
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