IXDH20N120 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage IGBT with optional Diode

High Voltage IGBT
with optional Diode
Short Circuit SOA Capability
Square RBSOA
IXDH 20N120
V_CES = 1200 V
IXDH 20N120 D1 I_C25
= 38 A
V = _{CE(sat) typ} 2.4 V
C
C
TO-247 AD
G
G
E
E
IXDH 20N120 IXDH 20N120 D1
Symbol
Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
RBSOA
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 20 kW
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 90°C, t_p = 1 ms
V_GE = ±15 V, T_J = 125°C, R_G = 82 W
Clamped inductive load, L = 30 µH
t_SC
(SCSOA)
P_C
V_GE = ±15 V, V_CE = V_CES, T_J = 125°C
R_G = 82 W, non repetitive
T_C = 25°C
IGBT
Diode
T_J
T_stg
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
M_d
Weight
Mounting torque
Maximum Ratings
1200
V
1200
V
±20
V
±30
V
38
A
25
A
50
A
I_CM = 35
A
V_CEK < V_CES
10
µs
200
W
75
W
-55 ... +150
°C
-55 ... +150
°C
300
°C
0.8 - 1.2
Nm
6
g
G
C
E
G = Gate,
C = Collector ,
C (TAB)
E = Emitter
TAB = Collector
Features
q _{NPT IGBT technology}
q _{low saturation voltage}
q _{low switching losses}
q _{square RBSOA, no latch up}
q _{high short circuit capability}
q _{positive temperature coefficient for}
easy paralleling
q _{MOS input, voltage controlled}
q _{optional ultra fast diode}
q _{International standard package}
Advantages
q _{Space savings}
q _{High power density}
Typical Applications
q _{AC motor speed control}
q _{DC servo and robot drives}
q _{DC choppers}
q _{Uninteruptible power supplies (UPS)}
q _{Switch-mode and resonant-mode}
power supplies
Symbol
V_(BR)CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GE = 0 V
I_C = 0.6 mA, V_CE = V_GE
V_CE = V_CES
T_J = 25°C
T = 125°C
J
V_CE = 0 V, V_GE = ± 20 V
I_C = 20 A, V_GE = 15 V
1200
V
4.5
6.5 V
1 mA
2
mA
± 500 nA
2.4
3V
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