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IXDD509 Datasheet, PDF (1/14 Pages) IXYS Corporation – 9 Ampere Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown
IXDD509 / IXDE509
9 Ampere Low-Side Ultrafast MOSFET Drivers
with Enable for fast, controlled shutdown
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected up to 9 Amps
• High 9A peak output current
• Wide operating range: 4.5V to 30V
• -55°C to +125°C Extended operating
temperature
• Ability to disable output under faults
• High capacitive load drive capability:
1800pF in <15ns
• Matched rise and fall times
• Low propagation delay time
• Low output impedance
• Low supply current
Applications
• Driving MOSFETs and IGBTs
• Limiting di/dt under short circuit
• Motor controls
• Line drivers
• Pulse generators
• Local power ON/OFF switch
• Switch mode power supplies (SMPS)
• DC to DC converters
• Pulse transformer driver
• Class D switching amplifiers
• Power charge pumps
General Description
The IXDD509 and IXDE509 are high speed high current gate
drivers specifically designed to drive the largest IXYS
MOSFETs & IGBTs to their minimum switching time and
maximum parctical frequency limits. The IXDD509 and
IXDE509 can source and sink 9 Amps of Peak Current
while producing voltage rise and fall times of less than
30ns. The inputs of the Drivers are compatible with TTL or
CMOS and are virtually immune to latch up over the entire
operating range. Patented* design innovations eliminate
cross conduction and current "shoot-through". Improved
speed and drive capabilities are further enhanced by
matched rise and fall times.
The IXDD509 and IXDE509 incorporate a unique ability to
disable the output under fault conditions. When a logical
low is forced into the Enable input, both final output stage
MOSFETs, (NMOS and PMOS) are turned off. As a result,
the output of the IXDD509 or IXDE509 enters a tristate high
impedance mode and with additional circuitry, achieves a
Soft Turn-Off of the MOSFET/IGBT when a short circuit is
detected. This helps prevent damage that could occur to
the MOSFET/IGBT if it were to be switched off abruptly due
to a dv/dt over-voltage transient.
The IXDD509 and IXDE509 are available in the 8-Pin P-DIP
(PI) package, the 8-Pin SOIC (SIA) package, and the 6-
Lead DFN (D1) package, (which occupies less than 65% of
the board area of the 8-Pin SOIC).
*United States Patent 6,917,227
Ordering Information
Part Number
Description
IXDD509PI
IXDD509SIA
IXDD509SIAT/R
IXDD509D1
IXDD509D1T/R
IXDE509PI
IXDE509SIA
IXDE509SIAT/R
IXDE509D1
IXDE509D1T/R
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
9A Low Side Gate Driver I.C.
Package
Type
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
6-Lead DFN
6-Lead DFN
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
6-Lead DFN
6-Lead DFN
Packing Style
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Pack
Qty
50
94
2500
56
2500
50
94
2500
56
2500
Configuration
Non-Inverting
with Enable
Inverting
with Enable
NOTE: All parts are lead-free and RoHS Compliant
Copyright © 2007 IXYS CORPORATION All rights reserved
First Release
DS99679A(10/07)
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