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IXDD504 Datasheet, PDF (1/13 Pages) IXYS Corporation – 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers with Enable for fast, controlled shutdown
IXDD504/ IXDE504
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
with Enable for fast, controlled shutdown
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected up to 4 Amps
• High 4A Peak Output Current
• Wide Operating Range: 4.5V to 30V
• -55°C to +125°C Extended Operating
Temperature
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in a Single Package
Applications
• Limiting di/dt under Short Circuit
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
• Power Charge Pumps
General Description
The IXDD504 and IXDE504 each consist of two 4-Amp
CMOS high speed MOSFET gate drivers for driving the
latest IXYS MOSFETs & IGBTs. Each of the dual outputs
can source and sink 4 Amps of peak current while produc-
ing voltage rise and fall times of less than 15ns. The input
of each driver is TTL or CMOS compatible and is virtually
immune to latch up. Patented* design innovations eliminate
cross conduction and current "shoot-through". Improved
speed and drive capabilities are further enhanced by fast,
matched rise and fall times.
Additionally, each IXDD504 or IXDE504 driver incorporates a
unique ability to disable the output under fault conditions.
When a logical low is forced into the Enable input of a
driver, both of it's final output stage MOSFETs (NMOS and
PMOS) are turned off. As a result, the respective output of
the IXDD504 enters a tristate mode and, with additional
cicuitry, achieves a soft turn-off of the MOSFET/IGBT when
a short circuit is detected. This helps prevent damage that
could occur to the MOSFET/IGBT if it were to be switched
off abruptly due to a dv/dt over-voltage transient.
The IXDD504 and IXDE504 are each available in the 8-Pin
P-DIP (PI) package, the 8-Pin SOIC (SIA) package, and the
8-Lead DFN (D2) package, (which occupies less than 65%
of the board area of the 8-Pin SOIC).
*United States Patent 6,917,227
Ordering Information
Part Number
Description
IXDD504PI
IXDD504SIA
IXDD504SIAT/R
IXDD504D2
IXDD504D2T/R
IXDE504PI
IXDE504SIA
IXDE504SIAT/R
IXDE504D2
IXDE504D2T/R
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
Package
Type
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
8-Lead DFN
8-Lead DFN
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
8-Lead DFN
8-Lead DFN
Packing Style
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Pack
Qty
50
94
2500
56
2500
50
94
2500
56
2500
Configuration
Dual Non-
Inverting
Drivers with
Enable
Dual Inverting
Drivers
Inverting with
Enable
NOTE: All parts are lead-free and RoHS Compliant
Copyright © 2007 IXYS CORPORATION All rights reserved
First Release
DS99568A(10/07)
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