IXBX75N170 Datasheet, PDF (1/5 Pages) IXYS Corporation – BiMOSFETTM Monolithic Bipolar MOS Transistor

Preliminary Technical Information
BiMOSFET^TM Monolithic
Bipolar MOS Transistor
IXBK75N170
IXBX75N170
V_CES =
I
=
C110
≤ V_CE(sat)
1700V
75A
3.1V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_LRMS
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
1700
V
1700
V
±20
V
±30
V
T_C = 25°C (Chip Capabilitty)
T_C = 25°C (Lead RMS Limit)
T_C = 110°C
T_C = 25°C, 1ms
200
A
160
A
75
A
580
A
V_GE= 15V, T_VJ = 125°C, R_G = 1Ω
I_CM = 150
A
Clamped Inductive Load
V_CE < 0.8 • V_CES
T_C = 25°C
1040
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
°C
260
°C
Mounting Torque (TO-264 )
Mounting Force (PLUS247 )
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 1.5mA, V_CE = V_GE
I_CES
I_GES
V_CE(sat)
V_CE = 0.8 • V_CES, V_GE = 0V
T_J = 125°C
V_CE = 0V, V_GE = ± 20V
I_C = I_C110, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1700
V
2.5
5.5 V
25 μA
2 mA
±100 nA
2.6
3.1 V
3.1
V
TO-264 (IXBK)
G
C
Tab
E
PLUS247^TM (IXBX)
G
C
Tab
E
G = Gate
E = Emitter
C = Collector
Tab = Collector
Features
z _{International Standard Packages}
z _{High Blocking Voltage}
z _{High Current Handling Capability}
z _{Anti-Parallel Diode}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
z _{Intergrated Diode Can Be Used for}
Protection
Applications
z _{Capacitor Discharge}
z _{AC Switches}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _UPS
z _{AC Motor Drives}
© 2009 IXYS CORPORATION, All Rights Reserved
DS100167A(10/09)