IXBN75N170A Datasheet, PDF (1/2 Pages) IXYS Corporation – BIMOSFET Monolithic Bipolar MOS Transistor

Advance Technical Information
BIMOSFET^TM Monolithic
Bipolar MOS Transistor
IXBN 75N170A
V_CES = 1700 V
I_C25
= 75 A
V_CE(sat) = 6.0 V
t_fi
= 60 ns
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C90
I_CM
SSOA
(RBSOA)
T_SC
(SCSOA)
P_C
T_J
T_JM
T_stg
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
Continuous
Transient
T_C = 25°C
T_C = 90°C
T_C = 25°C, 1 ms
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load
V_GE = 15 V, V_CES = 1200V, T_J = 125°C
R_G = 10 Ω non repetitive
T_C = 25°C
Mounting torque
Terminal connection torque (M4)
Maximum Ratings
1700
V
1700
V
±20
V
±30
V
75
A
42
A
240
A
I_CM = 100
A
V_CES = 1350
V
10
µs
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.5/13 Nm/lb.in.
1.5/13 Nm/lb.in.
30
g
miniBLOC, SOT-227 B (IXBN)
E153432
E
G
E
C
G = Gate
E = Emitter
C = Collector
Either Source terminal at miniBLOC can be used
as Main or Kelvin Emitter
Features
z _{High Blocking Voltage}
z _{Fast switching}
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
z _{Isolation voltage 2500V}
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
I_C = 250 µA, V_GE = 0 V
I_C = 1500 µA, V_CE = V_GE
V_CE = 0.8 V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
T_J = 25°C
T_J = 125°C
T_J = 125°C
1700
2.5
V
5.5 V
50 µA
1.5 mA
±200 nA
4.5 6.0 V
5.0
V
Applications
z _{AC motor speed control}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{Substitutes for high voltage MOSFETs}
Advantages
z _{Lower conduction losses than MOSFETs}
z _{High power density}
z _{Easy to mount with 2 screws}
z _{Space saving}
© 2002 IXYS All rights reserved
98938 (7/02)