IXBL64N250 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage, High Gain BiMOSFETTM

Advance Technical Information
High Voltage, High Gain
BiMOSFET^TM
Monolithic Bipolar
MOS Transistor
IXBL64N250
V_CES =
I
=
C110
≤ V_CE(sat)
2500V
46A
3.0V
(Electrically Isolated Tab)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_SC
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
V_ISOL
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
2500
V
2500
V
±25
V
±35
V
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
116
A
46
A
750
A
V_GE= 15V, T_VJ = 125°C, R_G = 1Ω
I_CM = 160
A
Clamped Inductive Load
V_CE < 0.8 • V_CES
V_GE = 15V, T_J = 125°C
R_G = 5Ω, V_CE = 1250V, Non-Repetitive
10
μs
T_C = 25°C
500
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
°C
260
°C
50/60Hz, 1 minute
2500
V~
Mounting Force with Clip
30..170 / 7..36 Nm/lb-in.
8
g
ISOPLUS i5-Pak^TM
G
E
C
Isolated Tab
G = Gate
E = Emitter
C = Collector
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{2500V∼ Electrical Isolation}
z _{High Blocking Voltage}
z _{Low Switching Losses}
z _{High Current Handling Capability}
z _{Anti-Parallel Diode}
Advantages
z _{High Power Density}
z _{Low Gate Drive Requirement}
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 1mA, V_GE = 0V
V_GE(th)
I_C = 4mA, V_CE = V_GE
I_CES
I_GES
V_CE(sat)
V_CE = 0.8 • V_CES, V_GE = 0V
Note 2, T_J = 125°C
V_CE = 0V, V_GE = ± 25V
I_C = 64A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
2500
V
3.0
5.0 V
50 μA
6 mA
±200 nA
2.5
3.0 V
3.1
V
Applications
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{Uninterrupted Power Supplies (UPS)}
z _{Capacitor Discharge Circuits}
z _{Laser Generators}
© 2010 IXYS CORPORATION, All Rights Reserved
DS100259(04/10)