IXBK55N300 Datasheet, PDF (1/6 Pages) IXYS Corporation – High Voltage, High Gain BiMOSFETTM Monolithic Bipolar MOS Transistor

High Voltage, High Gain
BiMOSFET^TM
Monolithic Bipolar
MOS Transistor
IXBK55N300
IXBX55N300
V_CES =
I
=
C110
≤ V_CE(sat)
3000V
55A
3.2V
TO-264 (IXBK)
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_LRMS
I_C110
I_CM
SSOA
(RBSOA)
T_SC
(SCSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
F_C
Weight
Test Conditions
Maximum Ratings
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
3000
V
3000
V
±25
V
±35
V
T_C = 25°C ( Chip Capability )
T_C = 25°C ( Lead RMS Limit )
T_C = 110°C
T_C = 25°C, 1ms
130
A
120
A
55
A
600
A
V_GE= 15V, T_VJ = 125°C, R_G = 2Ω
Clamped Inductive Load
I_CM = 110
A
@0.8 • V_CES
V_GE = 15V, T_J = 125°C,
R_G = 10Ω, V_CE = 1250V, Non-Repetitive
10
μs
T_C = 25°C
625
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300
°C
260
°C
Mounting Torque (TO-264 )
Mounting Force (PLUS247 )
1.13/10
20..120/4.5..27
Nm/lb.in.
N/lb.
TO-264
PLUS247
10
g
6
g
Symbol
Test Conditions
(T_J = 25°C, Unless Otherwise Specified)
BV_CES
I_C = 1mA, V_GE = 0V
V_GE(th)
I_C = 4mA, V_CE = V_GE
I_CES
V_CE = V_CES, V_GE = 0V
T_J = 125°C
I_GES
V_CE = 0V, V_GE = ± 25V
V_CE(sat)
I_C = 55A, V_GE = 15V, Note 1
T_J = 125°C
Characteristic Values
Min. Typ. Max.
3000
V
3.0
5.0 V
50 μA
3 mA
±200 nA
2.7 3.2 V
3.3
V
G
C
E
Tab
PLUS247 (IXBX)
G
G
C
E
Tab
G = Gate
C = Collector
E = Emitter
Tab = Collector
Features
z _{High Blocking Voltage}
z _{International Standard Packages}
z _{Low Conduction Losses}
z _{High Current Handling Capability}
z _{MOS Gate Turn-On}
- Drive Simplicity
Advantages
z _{Easy to Mount}
z _{Space Savings}
z _{High Power Density}
Applications
z _{Uninterruptible Power Supplies (UPS)}
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{Capacitor Discharge Circuits}
z _{Laser Generators}
© 2011 IXYS CORPORATION, All Rights Reserved
DS100158A(11/11)