IXBH6N170 Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage, High Gain BIMOSFET™ Monolithic Bipolar MOS Transistor

Advanced Technical Information
High Voltage, High Gain
BIMOSFET^TM Monolithic
Bipolar MOS Transistor
IXBH 6N170
IXBT 6N170
V_CES = 1700 V
I_C25 = 12 A
V_CE(sat) = 3.6 V
Symbol
Test Conditions
Maximum Ratings
V_CES
V_CGR
T_J = 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
1700
V
1700
V
V_GES
V_GEM
Continuous
Transient
±20
V
±30
V
I_C25
T_C = 25°C
I_C90
T_C = 90°C
I_CM
T_C = 25°C, 1 ms
12
A
6
A
24
A
SSOA
(RBSOA)
V_GE = 15 V, T_VJ = 125°C, R_G = 33 Ω
Clamped inductive load
I_CM =
16
A
V_CES = 1350
V
P_C
T_C = 25°C
75
W
T_J
-55 ... +150
°C
T_JM
150
°C
T_stg
-55 ... +150
°C
Maximum Lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
°C
M_d
Weight
Mounting torque (M3)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
6
g
4
g
TO-268 (IXBT)
G
E
TO-247 AD (IXBH)
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z _{High Blocking Voltage}
z _{JEDEC TO-268 surface and}
JEDEC TO-247 AD
z _{Low conduction losses}
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Symbol
BV_CES
V_GE(th)
I_CES
I_GES
V_CE(sat)
Test Conditions
I_C = 250 µA, V_GE = 0 V
I_C = 250 µA, V_CE = V_GE
V_CE = 0.8 V_CES
V_GE = 0 V
V_CE = 0 V, V_GE = ±20 V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
T_J = 25°C
T_J = 125°C
T_J = 125°C
1700
3.0
V
6V
10 µA
100 µA
±100 nA
3.0 3.6 V
3.3
V
Applications
z _{AC motor speed control}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{Capacitor discharge circuits}
Advantages
z _{High power density}
z _{Suitable for surface mounting}
z _{Easy to mount with 1 screw,}
(isolated mounting screw hole)
© 2003 IXYS All rights reserved
DS99004(02/03)