IXBH5N160G Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage BIMOSFETTM

High Voltage
BIMOSFET^TM
Monolithic Bipolar MOS Transistor
IXBP 5N160 G
IXBH 5N160 G
I_C25 = 5.7 A
V_CES = 1600 V
V_CE(sat) = 4.9 V
t_f
= 70 ns
Preliminary data sheet
C
TO-220 AB (IXBP)
G
C
E
C (TAB)
G
TO-247 AD (IXBH)
E
G
C
C (TAB)
E
A = Anode, C = Cathode , TAB = Cathode
IGBT
Symbol
V_CES
V_GES
I_C25
I_C90
I_CM
V_CEK
P_tot
Symbol
V_CE(sat)
V
GE(th)
I_CES
I_GES
t_d(on)
t
r
t_d(off)
t_f
C
ies
Q_Gon
V_F
R_thJC
Conditions
T_VJ = 25°C to 150°C
T_C = 25°C
T_C = 90°C
V_GE
=
10/0
V;
R
G
=
47
Ω;
T_VJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
T_C = 25°C
Maximum Ratings
1600
V
± 20
V
5.7
A
3.5
A
6
A
0.8V_CES
68
W
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
I_C = 3 A; V_GE = 15 V; T_VJ = 25°C
T_VJ = 125°C
I = 0.3 mA; V = V
C
GE
CE
V_GE = 0 V; V_CE = V_CES; T_VJ = 25°C
V_CE = 0.8V_CES; T_VJ = 125°C
V_CE = 0 V; V_GE = ± 20 V
Inductive load, T_VJ = 125°C
V_CE = 960 V; I_C = 3 A
V_GE = 10/0 V; R_G = 47 Ω
4.9 7.2 V
5.6
V
3.5
5.5 V
150 µA
50
µA
100 nA
140
ns
200
ns
120
ns
70
ns
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
V_CE = 600V; V_GE = 10 V; I_C = 3 A
(reverse conduction); I_F = 3 A
325
pF
26
nC
6
V
1.85 K/W
Features
• High Voltage BIMOSFET^TM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- MOSFET compatible control
10 V turn on gate voltage
- fast switching for high frequency
operation
- reverse conduction capability
• industry standard package
- TO-220AB
- TO-247AD
epoxy meets UL94V-0
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]