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IXBH42N170 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH 42N170
IXBT 42N170
VCES = 1700 V
IC25 = 75 A
VCE(sat) = 3.6 V
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
1700
V
VGES
VGEM
Continuous
Transient
±20
V
±30
V
IC25
TC = 25°C
IC90
TC = 90°C
ICM
TC = 25°C, 1 ms
75
A
42
A
180
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 10 Ω
Clamped inductive load
ICM =
90
A
VCES = 1350
V
TSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 10 Ω non repetitive
10
µs
PC
TC = 25°C
360
W
TJ
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Maximum Lead temperature for soldering
350
°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
°C
Md
Weight
Mounting torque (M3)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
6
g
4
g
TO-268 (IXBT)
G
E
TO-247 AD (IXBH)
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High Blocking Voltage
z JEDEC TO-268 surface and
JEDEC TO-247 AD
z Low conduction losses
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Molding epoxies meet UL 94 V-0
flammability classification
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
IC = 750 µA, VCE = VGE
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
1700
2.5
V
5.5 V
TJ = 25°C
TJ = 125°C
50 µA
1.5 mA
±100 nA
TJ = 125°C
3.6 V
3.7
V
Applications
z AC motor speed control
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z Capacitor discharge circuits
Advantages
z Lower conduction losses than MOSFETs
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2004 IXYS All rights reserve
DS98710B(12/04)