IXBH28N170A Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

ADVANCE TECHNICAL INFORMATION
High Voltage, High Gain
BIMOSFET^TM Monolithic
Bipolar MOS Transistor
IXBH 28N170A
IXBT 28N170A
V_CES = 1700 V
I_C25 = 30 A
V = 6.0 V
CE(sat)
t_fi
= 50 ns
Symbol
Test Conditions
Maximum Ratings
V
CES
V_CGR
T
J
= 25°C to 150°C
T_J = 25°C to 150°C; R_GE = 1 MΩ
1700
V
1700
V
V_GES
V_GEM
Continuous
Transient
±20
V
±30
V
I_C25
T_C = 25°C
I
C90
T
C
= 90°C
I_CM
T_C = 25°C, 1 ms
30
A
14
A
60
A
SSOA
(RBSOA)
V_GE = 15 V, T_VJ = 125°C, R_G = 10 Ω
Clamped inductive load
I_CM =
60
A
V_CES = 1350
V
P
C
T
C
= 25°C
300
W
T_J
-55 ... +150
°C
T_JM
150
°C
T_stg
-55 ... +150
°C
Maximum Lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
°C
M_d
Weight
Mounting torque (M3) (TO-247)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
6
g
4
g
Symbol
BV_CES
V_GE(th)
I_CES
I
GES
V_CE(sat)
Test Conditions
I_C = 250 µA, V_GE = 0 V
Temperature Coefficent
I_C = 250 µA, V_CE = V_GE
Temperature Coefficent
V_CE = 0.8 V_CES
V =0V
GE
V
CE
=
0
V,
V
GE
=
±20
V
I_C = I_C90, V_GE = 15 V
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
1700
3.0
0.10
- 0.24
V
%/K
6.0 V
%/K
T_J = 25°C
T
J
=
125°C
10 µA
100 µA
±100 nA
T_J = 125°C
4.7 6.0 V
5.0
V
TO-268 (IXBT)
G
E
TO-247 AD (IXBH)
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z _{High Blocking Voltage}
z _{JEDEC TO-268 surface and}
JEDEC TO-247 AD
z _{Low conduction losses}
z _{High current handling capability}
z _{MOS Gate turn-on}
- drive simplicity
z _{Molding epoxies meet UL 94 V-0}
flammability classification
Applications
z _{AC motor speed control}
z _{Uninterruptible power supplies (UPS)}
z _{Switched-mode and resonant-mode}
power supplies
z _{Capacitor discharge circuits}
Advantages
z _{High power density}
z _{Suitable for surface mounting}
z _{Easy to mount with 1 screw,}
(isolated mounting screw hole)
© 2005 IXYS All rights reserved
DS99333(02/05)