IXBH24N170 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

High Voltage, High Gain
BIMOSFET^TM Monolithic
Bipolar MOS Transistor
IXBT24N170
IXBH24N170
V_CES =
I_C110 =
V_CE(sat) ≤
1700V
24A
2.5V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_J = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 10Ω
Clamped Inductive Load
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
1700
V
1700
V
± 20
V
± 30
V
60
A
24
A
230
A
I_CM = 50
A
V_CES ≤ 1360
V
250
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
4
g
6
g
Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
I_GES
V_CE(sat)
V_CE = 0.8 • V_CES, V_GE = 0V
V_CE = 0V, V_GE = ± 20V
I_C = I_C110, V_GE = 15V, Note 1
T_J = 125°C
T_J = 125°C
Characteristic Values
Min. Typ. Max.
1700
V
2.5
5.0 V
25 μA
500 μA
±100 nA
2.5 V
2.4
V
TO-268 (IXBT)
G
E
C (Tab)
TO-247 (IXBH)
G
C
E
C (Tab)
G = Gate
C = Collector
E = Emiiter Tab = Collector
Features
z _{High Blocking Voltage}
z _{International Standard Packages}
z _{Low Conduction Losses}
Advantages
z _{Low Gate Drive Requirement}
z _{High Power Density}
Applications
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{Uninterruptible Power Supplies (UPS)}
z _{Laser Generators}
z _{Capacitor Discharge Circuits}
z _{AC Switches}
© 2013 IXYS CORPORATION, All Rights Reserved
DS100190A(03/13)