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| IXBH20N140 Datasheet, PDF (1/4 Pages) IXYS Corporation – High Voltage BIMOSFET Monolithic Bipolar MOS Transistor | |||
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High Voltage BIMOSFETTM
Monolithic Bipolar
MOS Transistor
N-Channel, Enhancement Mode
IXBH 20N140
IXBH 20N160
VCES = 1400/1600 V
IC25 = 20 A
VCE(sat) = 4.7 V typ.
tfi
= 40 ns
C TO-247 AD
G
G
C
E
C (TAB)
E
G = Gate,
C = Collector,
E = Emitter,
TAB = Collector
Symbol
VCES
VCGR
VGES
VGEM
IC25
I
C90
ICM
SSOA
(RBSOA)
PC
TJ
T
JM
Tstg
T
L
Md
Weight
Conditions
Maximum Ratings
20N140 20N160
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
Continuous
Transient
1400
1400
1600 V
1600 V
±20
V
±30
V
TC = 25°C,
T
C
= 90°C
TC = 25°C, 1 ms
20
A
13
A
26
A
VGE= 15 V, TVJ = 125°C, RG = 27 W VCE = 0.8â¢VCES ICM = 24
A
Clamped inductive load, L = 100 mH
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
200
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
Mounting torque
1.15/10 Nm/lb.in.
6
g
Features
⢠International standard package
JEDEC TO-247 AD
⢠High Voltage BIMOSFETTM
- replaces high voltage Darlingtons
and series connected MOSFETs
- lower effective RDS(on)
⢠Monolithic construction
- high blocking voltage capability
- very fast turn-off characteristics
⢠MOS Gate turn-on
- drive simplicity
⢠Reverse conducting capability
Applications
⢠Flyback converters
⢠DC choppers
⢠Uninterruptible power supplies (UPS)
⢠Switched-mode and resonant-mode
power supplies
⢠CRT deflection
⢠Lamp ballasts
Symbol
BVCES
VGE(th)
ICES
I
GES
VCE(sat)
Conditions
IC = 1 mA, VGE = 0 V
IC = 1.5 mA, VCE = VGE
VCE = 0.8 ⢠VCES
V =0V
GE
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
20N140
20N160
1400
1600
4
V
V
8V
TJ = 25°C
T
J
=
125°C
300 mA
1 mA
± 500 nA
TJ = 125°C
4.7 6.5 V
5.4
V
Advantages
⢠Easy to mount with 1 screw
(isolated mounting screw hole)
⢠Space savings
⢠High power density
© 2000 IXYS All rights reserved
1-4
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