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IXBH16N170A Datasheet, PDF (1/2 Pages) IXYS Corporation – High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
Advanced Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBH 16N170A
IXBT 16N170A
VCES = 1700 V
IC25 = 16 A
VCE(sat) = 6.0 V
tfi(typ) = 50 ns
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MW
1700
V
1700
V
V
GES
VGEM
Continuous
Transient
±20
V
±30
V
IC25
TC = 25°C
IC90
TC = 90°C
ICM
TC = 25°C, 1 ms
16
A
10
A
40
A
SSOA
(RBSOA)
V
GE
=
15
V,
T
VJ
=
125°C,
R
G
=
33
W
Clamped inductive load
I = 40
A
CM
VCES = 1350
V
tSC
(SCSOA)
VGE = 15 V, VCES = 1200V, TJ = 125°C
RG = 33 W non repetitive
10
ms
PC
TC = 25°C
150
W
T
J
-55 ... +150
°C
TJM
150
°C
T
stg
-55 ... +150
°C
Maximum Lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Maximum tab temperature for soldering SMD devices for 10 s
260
°C
Md
Weight
Mounting torque (M3) (TO-247)
TO-247
TO-268
1.13/10 Nm/lb.in.
6
g
4
g
TO-268
(IXBT)
G
E
TO-247 AD (IXBH)
G
C
E
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
• Monolithicfastreversediode
• High Blocking Voltage
• JEDEC TO-268 surface mount and
JEDEC TO-247 AD packages
• Low switching losses
• High current handling capability
• MOS Gate turn-on
- drive simplicity
• Molding epoxies meet UL94V-0
flammability classification
Symbol
BVCES
VGE(th)
ICES
I
GES
VCE(sat)
Test Conditions
IC = 250 mA, VGE = 0 V
IC = 250 mA, VCE = VGE
VCE = 0.8 VCES
V = 0 V; Note 1
GE
V
CE
=
0
V,
V
GE
=
±20
V
IC = IC90, VGE = 15 V
Note 2
Characteristic Values
(T
J
=
25°C,
unless
otherwise
specified)
min. typ. max.
T
J
=
125°C
TJ = 125°C
1700
2.5
V
5.5 V
50 mA
1.5 mA
±100 nA
6.0 V
5.0
V
Applications
• AC motor speed control
• Uninterruptible power supplies (UPS)
• Switched-mode and resonant-mode
power supplies
• Capacitor discharge circuits
Advantages
• Lower conduction losses than MOSFETs
• High power density
• Suitable for surface mounting
• Easy to mount with 1 screw,
(isolated mounting screw hole)
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
98707 (02/23/00)
1-2
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