IXBH12N300 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage, High Gain BIMOSFETTM Monolithic Bipolar MOS Transistor

High Voltage, High Gain
BIMOSFET^TM Monolithic
Bipolar MOS Transistor
IXBT12N300
IXBH12N300
V_CES =
I_C110 =
V_CE(sat) ≤
3000V
12A
3.2V
Symbol
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
M_d
Weight
Test Conditions
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 30Ω
Clamped Inductive Load
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Torque (TO-247)
TO-268
TO-247
Maximum Ratings
3000
V
3000
V
± 20
V
± 30
V
30
A
12
A
100
A
I_CM = 98
A
1500
V
160
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
1.13/10
Nm/lb.in.
4
g
6
g
Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
BV_CES
I_C = 250μA, V_GE = 0V
V_GE(th)
I_C = 250μA, V_CE = V_GE
I_CES
V_CE = 0.8 • V_CES, V_GE = 0V
I_GES
V_CE(sat)
V_CE = 0V, V_GE = ± 20V
I_C = 12A, V_GE = 15V, Note 1
Characteristic Values
Min.
Typ. Max.
3000
V
3.0
5.0 V
T_J = 125°C
25 μA
1 mA
±100 nA
2.8
3.2 V
T_J = 125°C
3.5
V
TO-268 (IXBT)
G
E
C (Tab)
TO-247 (IXBH)
G
C
E
C (Tab)
G = Gate
C = Collector
E = Emiiter Tab = Collector
Features
z _{High Blocking Voltage}
z _{International Standard Packages}
z _{Anti-Parallel Diode}
z _{Low Conduction Losses}
Advantages
z _{Low Gate Drive Requirement}
z _{High Power Density}
Applications:
z _{Switched-Mode and Resonant-Mode}
Power Supplies
z _{Uninterruptible Power Supplies (UPS)}
z _{Laser Generators}
z _{Capacitor Discharge Circuits}
z _{AC Switches}
© 2012 IXYS CORPORATION, All Rights Reserved
DS100120A(10/12)