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IXBH10N170 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
Preliminary Data Sheet
IXBH 10N170
IXBT 10N170
VCES = 1700 V
IC25 = 20 A
VCE(sat) = 3.8 V
Symbol
Test Conditions
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGE = 1 MΩ
1700
V
1700
V
VGES
VGEM
Continuous
Transient
±20
V
±30
V
IC25
TC = 25°C
IC90
TC = 90°C
ICM
TC = 25°C, 1 ms
20
A
10
A
40
A
SSOA
(RBSOA)
VGE = 15 V, TVJ = 125°C, RG = 33 Ω
Clamped inductive load
ICM =
20
A
VCES = 1350
V
PC
TC = 25°C
140
W
TJ
-55 ... +150
°C
TJM
150
°C
Tstg
-55 ... +150
°C
Maximum Lead temperature for soldering
300
°C
1.6 mm (0.062 in.) from case for 10 s
Maximum Tab temperature for soldering SMD devices for 10 s 260
°C
Md
Weight
Mounting torque (M3) (TO-247)
TO-247 AD
TO-268
1.13/10Nm/lb.in.
6
g
4
g
Symbol
BVCES
VGE(th)
ICES
IGES
VCE(sat)
Test Conditions
IC = 250 µA, VGE = 0 V
Temperature Coefficent
IC = 250 µA, VCE = VGE
Temperature Coefficent
VCE = 0.8 VCES
VGE = 0 V
VCE = 0 V, VGE = ±20 V
IC = IC90, VGE = 15 V
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
TJ = 25°C
TJ = 125°C
TJ = 125°C
1700
3.0
0.10
- 0.24
V
%/K
5.0 V
%/K
10 µA
100 µA
±100 nA
3.4 3.8 V
4.1
V
TO-268 (IXBT)
G
E
TO-247 AD (IXBH)
(TAB)
G
CE
C (TAB)
G = Gate,
E = Emitter,
C = Collector,
TAB = Collector
Features
z High Blocking Voltage
z JEDEC TO-268 surface and
JEDEC TO-247 AD
z Low conduction losses
z High current handling capability
z MOS Gate turn-on
- drive simplicity
z Molding epoxies meet UL 94 V-0
flammability classification
Applications
z AC motor speed control
z Uninterruptible power supplies (UPS)
z Switched-mode and resonant-mode
power supplies
z Capacitor discharge circuits
Advantages
z High power density
z Suitable for surface mounting
z Easy to mount with 1 screw,
(isolated mounting screw hole)
© 2003 IXYS All rights reserved
DS99048(05/03)