IXBF12N300 Datasheet, PDF (1/5 Pages) IXYS Corporation – High Voltage, High Gain BIMOSFET Monolithic Bipolar MOS Transistor

High Voltage, High Gain
BIMOSFET^TM Monolithic
Bipolar MOS Transistor
(Electrically Isolated Tab)
IXBF12N300
V_CES =
I_C110 =
V_CE(sat) ≤
3000V
11A
3.2V
Symbol Test Conditions
V_CES
V_CGR
V_GES
V_GEM
I_C25
I_C110
I_CM
SSOA
(RBSOA)
T_C = 25°C to 150°C
T_J = 25°C to 150°C, R_GE = 1MΩ
Continuous
Transient
T_C = 25°C
T_C = 110°C
T_C = 25°C, 1ms
V_GE = 15V, T_VJ = 125°C, R_G = 20Ω
Clamped Inductive Load
P_C
T_J
T_JM
T_stg
T_L
T_SOLD
F_C
V_ISOL
Weight
T_C = 25°C
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10 seconds
Mounting Force
50/60Hz, 1 Minute
Maximum Ratings
3000
V
3000
V
± 20
V
± 30
V
26
A
11
A
98
A
I_CM = 98
A
1500
V
125
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
300
°C
260
°C
20..120 / 4.5..27
4000
Nm/lb.in.
V~
5
g
Symbol Test Conditions
(T_J = 25°C Unless Otherwise Specified)
Characteristic Values
Min. Typ. Max.
BV_CES
I_C = 250μA, V_GE = 0V
3000
V
V_GE(th)
I_C = 250μA, V_CE = V_GE
3.0
5.0 V
I_CES
V_CE = 0.8 • V_CES, V_GE = 0V
Note 2, T_J = 125°C
25 μA
1 mA
I_GES
V_CE = 0V, V_GE = ± 20V
±100 nA
V_CE(sat)
I_C = I_C90, V_GE = 15V, Note 1
2.8
3.2 V
T_J = 125°C
3.5
V
ISOPLUS i4-Pak^TM
12
5
Isolated Tab
1 = Gate
2 = Emitter
5 = Collector
Features
z _{Silicon Chip on Direct-Copper Bond}
(DCB) Substrate
z _{Isolated Mounting Surface}
z _{4000V~ Electrical Isolation}
z _{High Blocking Voltage}
z _{High Peak Current Capability}
z _{Low Saturation Voltage}
Advantages
z _{Low Gate Drive Requirement}
z _{High Power Density}
Applications
z _{Switch-Mode and Resonant-Mode}
Power Supplies
z _{Capacitor Discharge Circuits}
z _{Uninterrupted Power Supplies(UPS)}
z _{Laser Drivers}
z _{AC Switches}
© 2012 IXYS CORPORATION, All Rights Reserved
DS100121B(06/12)