IXA37IF1200HJ Datasheet, PDF (1/6 Pages) IXYS Corporation – Uninterruptible power supply

IXA37IF1200HJ
XPT IGBT
Copack
I _C25
=
V_CES
=
V = _CE(sat)typ
58 A
1200 V
1.8 V
Part number
IXA37IF1200HJ
C (2)
(G) 1
Features / Advantages:
● Easy paralleling due to the positive temperature
coefficient of the on-state voltage
● Rugged XPT design (Xtreme light Punch Through)
results in:
- short circuit rated for 10 µsec.
- very low gate charge
- low EMI
- square RBSOA @ 3x Ic
● Thin wafer technology combined with the XPT design
results in a competitive low VCE(sat)
● SONIC™ diode
- fast and soft reverse recovery
- low operating forward voltage
E (3)
Applications:
● AC motor drives
● Solar inverter
● Medical equipment
● Uninterruptible power supply
● Air-conditioning systems
● Welding equipment
● Switched-mode and resonant-mode
power supplies
● Inductive heating, cookers
Package:
● Housing: ISOPLUS247
●rIndustry standard outline
●rDCB isolated backside
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
IGBT
Symbol
V_CES
V_GES
I_C25
I C90
P_tot
I _CES
Definition
Collector emitter voltage
Maximum DC gate voltage
Collector current
Total power dissipation
Collector emitter leakage current
I _GES
V_CE(sat)
Gate emitter leakage current
Collector emitter saturation voltage
V_GE(th)
Q _Gon
t _d(on)
t_r
t _d(off)
t_f
E_on
E_off
RBSOA
Gate emitter threshold voltage
Total gate charge
Turn-on delay time
Current rise time
Turn-off delay time
Current fall time
Turn-on energy per pulse
Turn-off energy per pulse
Reverse bias safe operation area
SCSOA
t SC
I _SC
R_thJC
Short circuit safe operation area
Short circuit duration
Short circuit current
Thermal resistance juntion to case
Conditions
V_GE = 0 V
T_VJ = 25°C
T_VJ = 25°C
T_C = 25°C
V_CE = V_CES ; V_GE = 0 V
T_C = 90°C
T_VJ = 25°C
T_VJ = 25°C
T_VJ = 125 °C
V_CE = 0 V; V_GE = ±20 V
I_C = 35 A; V_GE = 15 V
T_VJ = 25°C
T_VJ = 125 °C
IC = 1.5 mA; V_GE = V_CE
V_CE = 600 V; V_GE = 15 V; I_C = 35 A
Inductive load
V_CE = 600 V; I_C = 35 A
V_GE = ±15 V; R_G= 27 Ω
V_GE = 15 V; R_G = 27 Ω
V_CEK = 1200 V
T_VJ = 125 °C
T_VJ = 125°C
Ratings
min. typ. max. Unit
1200 V
±20 V
58 A
37 A
195 W
0.1 mA
0.1
mA
500 nA
1.8 2.1 V
2.1
V
5.4
6 6.5 V
106
nC
70
ns
40
ns
250
ns
100
ns
3.8
mJ
4.1
mJ
105 A
V_CE = 900 V; V_GE= ±15 V
R_G = 27 Ω ; non-repetitive
T_VJ = 125°C
10 µs
140 A
0.64 K/W
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100623c