IX2127 Datasheet, PDF (1/13 Pages) Clare, Inc. – High-Voltage Power MOSFET & IGBT Driver

INTEGRATED CIRCUITS DIVISION
IX2127
High-Voltage
Power MOSFET & IGBT Driver
Driver Characteristics
Parameter
Rating
V_OFFSET
I_{O +/-} (Source/Sink)
V_CSth
t_ON / t_OFF (Typical)
600
250/500
250
100
Units
V
mA
mV
ns
Features
• Floating Channel Designed for Bootstrap Operation
up to 600V
• Tolerant to Negative Transient Voltages; dV/dt
Immune
• Undervoltage Lockout
• 3.3V, 5V, and 12V Input Logic Compatible
• Open-Drain FAULT Indicator Pin Shows
Over-Current Shutdown
• Output in Phase with the Input
Applications
• High-Speed Gate Driver
• Motor Drive Inverter
Pb
e3
IX2127 Block Diagram
Description
The IX2127 is a high-voltage, high-speed power
MOSFET and IGBT driver. High-voltage level-shift
circuitry enables this device to operate up to 600V.
IXYS Integrated Circuits Division’s proprietary
common-mode design techniques provide stable
operation in high dV/dt noise environments.
An on-board comparator can be used to detect an
over-current condition in the driven MOSFET or IGBT
device, and then shut down drive to that device. An
open-drain output, FAULT, indicates that an
over-current shutdown has occurred.
The gate driver output typically can source 250mA
and sink 500mA, which is suitable for fluorescent lamp
ballast, motor control, SMPS, and other converter
drive topologies.
The IX2127 is provided in 8-pin DIP and 8-pin SOIC
packages, and is available in Tape & Reel versions.
See ordering information below.
Ordering Information
Part
IX2127G
IX2127N
IX2127NTR
Description
8-Pin DIP (50/Tube)
8-Pin SOIC (100/Tube)
8-Pin SOIC (2000/Reel)
V_CC
V_CC
Low Side High Side
V_B
Undervoltage Lockout
Data Latch
Transmitter
Low-High
Level Shift
Receiver
IN
Enable
Buffer
HO
V_S
FAULT
Blanking
Signal
Delay
Enable
Q
R
COM
Receiver
High-Low
Level Shift
Transmitter
Data Latch
S
+
CS
_
Comparator
DS-IX2127-R03
www.ixysic.com
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