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IX2120 Datasheet, PDF (1/13 Pages) IXYS Corporation – 1200V High and Low Side
INTEGRATED CIRCUITS DIVISION
Driver Characteristics
Parameter
VOFFSET
IO +/- (Source/Sink)
VOUT
ton/toff
Rating
1200
2/2
15-20
250/210
Units
V
A
V
ns
Features
• Floating Channel for Bootstrap Operation to +1200V
• Outputs Capable of Sourcing and Sinking 2A
• Gate Drive Supply Range From 15V to 20V
• Enhanced Robustness due to SOI Process
• Tolerant to Negative Voltage Transients:
dV/dt Immune
• 3.3V Logic Compatible
• Undervoltage Lockout for Both High-Side and
Low-Side Outputs
IX2120 Functional Block Diagram
IX2120
1200V High and Low Side
Gate Driver
Description
The IX2120 is a high voltage integrated circuit that can
drive high speed MOSFETs and IGBTs that operate at
up to +1200V. The IX2120 is configured with
independent high-side and low-side referenced output
channels, both of which can source and sink 2A. The
floating high-side channel can drive an N-channel
power MOSFET or IGBT 1200V from the common
reference.
Manufactured on IXYS Integrated Circuits Division's
proprietary high-voltage BCDMOS on SOI (silicon on
insulator) process, the IX2120 is extremely robust, and
is virtually immune to negative transients. The UVLO
circuit prevents turn-on of the MOSFET or IGBT until
there is sufficient VBS or VCC supply voltage.
The IX2120 is available in a 28-pin SOIC package.
Ordering Information
Part
IX2120B
IX2120BTR
Description
28-Pin SOIC (28/Tube)
28-Pin SOIC (1000/Reel)
VB
VDD
High
Voltage
UVLO
Level
RC
Level
Shift
Shift
Mid
Q
S
Buffer
HO
HIN
Input Control Logic
VDD / VCC
VSS / COM
Pulse
Generator
Voltage
Level
Shift
&
VS
SD
Cycle-by-Cycle
Edge-Triggered
VBM
Shutdown
VSM
LIN
UVLO
VCC
Level
VSS
Shift
VDD / VCC
VSS / COM
LS Delay
Control
Buffer
LO
COM
DS-IX2120-R02
www.ixysic.com
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