IX2113 Datasheet, PDF (1/13 Pages) IXYS Corporation – Outputs Capable of Sourcing and Sinking 2A

INTEGRATED CIRCUITS DIVISION
IX2113
600V High and Low Side
Gate Driver
Driver Characteristics
Parameter
Rating
V_OFFSET
I_{O +/-} (Source/Sink)
V_OUT
t_on/t_off
Delay Matching (Max)
600
2/2
10-20
113/100
20
Units
V
A
V
ns
ns
Features
• Floating Channel for Bootstrap Operation to +600V
with Absolute Maximum Rating of +700V
• Outputs Capable of Sourcing and Sinking 2A
• Gate Drive Supply Range From 10V to 20V
• Enhanced Robustness due to SOI Process
• Tolerant to Negative Voltage Transients:
dV/dt Immune
• 3.3V Logic Compatible
• Undervoltage Lockout for Both High-side and
Low-Side Outputs
• Matched Propagation Delays
IX2113 Functional Block Diagram
Description
The IX2113 is a high voltage integrated circuit that can
drive high speed MOSFETs and IGBTs that operate at
up to +600V. The IX2113 is configured with
independent high-side and low-side referenced output
channels, both of which can source and sink 2A. The
floating high-side channel can drive an N-channel
power MOSFET or IGBT 600V from the common
reference.
Manufactured on IXYS Integrated Circuits Division's
proprietary high-voltage BCDMOS on SOI (silicon on
insulator) process, the IX2113 is extremely robust, and
is virtually immune to negative transients. The UVLO
circuit prevents the turn-on of the MOSFET or IGBT
until there is sufficient V_BS or V_CC supply voltage.
Propagation delays are matched for use in high
frequency applications.
The IX2113 is available in a 14-pin DIP package and
in a 16-pin SOIC package.
Ordering Information
Part
IX2113G
IX2113B
IX2113BTR
Description
14-Pin DIP (25/Tube)
16-Pin SOIC (50/Tube)
16-Pin SOIC (1000/Reel)
V_DD
Level
V_B
Shift
High
UVLO
HIN
Input Control Logic
&
V_DD / V_CC
V_SS / COM
Pulse
Generator
Voltage
Level
Shift
RR
Q
S
Buffer
HO
SD
Cycle-by-Cycle
Edge-Triggered
Shutdown
LIN
V_S
UVLO
V_CC
Level
V_SS
Shift
V_DD / V_CC
V_SS / COM
LS Delay
Control
Buffer
LO
COM
DS-IX2113-R03
www.ixysic.com
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