IRFP264 Datasheet, PDF (1/2 Pages) International Rectifier – Power MOSFET(Vdss=250V, Rds(on)=0.075ohm, Id=38A)

Standard Power MOSFET
N-Channel Enhancement Mode
IRFP 264
V_DSS = 250 V
I_{D (cont)} = 38 A
R_DS(on) = 0.075 Ω
Symbol
Test Conditions
V_DSS
V
DGR
V_GS
V_GSM
I_D25
I_DM
I
AR
E_AR
dv/dt
P_D
T
J
T_JM
T
stg
M_d
Weight
T_J = 25°C to 150°C
T
J
=
25°C
to
150°C;
R
GS
=
1
MΩ
Continuous
Transient
T_C = 25°C
T_C = 25°C, pulse width limited by T_JM
T_C = 25°C
I_S ≤ I_DM, di/dt ≤ 100 A/µs, V_DD ≤ V_DSS,
T_J ≤ 150°C, R_G = 2 Ω
T_C = 25°C
Mounting torque
Maximum lead temperature for soldering
1.6 mm (0.062 in.) from case for 10 s
Maximum Ratings
250
V
250
V
±20
V
±30
V
38
A
150
A
38
A
28
mJ
5
V/ns
TO-247 AD
G = Gate,
S = Source,
D (TAB)
D = Drain,
TAB = Drain
280
W
-55 ... +150
°C
150
°C
-55 ... +150
°C
1.13/10 Nm/lb.in.
6
g
300
°C
Features
l _{International standard package}
JEDEC TO-247 AD
l _{Low RDS (on) HDMOS}TM _process
l _{Rugged polysilicon gate cell structure}
l _{High commutating dv/dt rating}
l _{Fast switching times}
Symbol
V_DSS
V
GS(th)
I_GSS
I_DSS
R
DS(on)
Test Conditions
Characteristic Values
(T_J = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 0 V, I_D = 250 µA
250
V
DS
=
V,
GS
I
D
=
250
µA
2
V_GS = ±20 V_DC, V_DS = 0
V_DS = 0.8 • V_DSS
V =0V
GS
T_J = 25°C
T
J
=
125°C
V = 10 V, I = 23 A
GS
D
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4V
±100 nA
25 µA
250 µA
0.075 Ω
Applications
l _{Switch-mode and resonant-mode}
power supplies
l _{Motor controld}
l _{Uninterruptible Power Supplies (UPS)}
l _{DC choppers}
Advantages
l _{Easy to mount with 1 screw}
(isolated mounting screw hole)
l _{Space savings}
l _{High power density}
IXYS reserves the right to change limits, test conditions, and dimensions.
© 2000 IXYS All rights reserved
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