 English |
|
|
|
|
|
|
|
| GWM220-004P3 Datasheet, PDF (1/2 Pages) IXYS Corporation – Three phase full bridge with Trench MOSFETs in DCB isolated high current package | |||
| |||
|
GWM 220-004P3
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
VDSS = 40 V
RDSon = 2.0 mâ¦
ID25 = 190 A
Preliminary data
L+
G1
G3
G5
S3
S5
S1
L1
L2
L3
G4
G6
G2
S4
S6
S2
L-
MOSFETs
Symbol
VDSS
VGS
ID25
ID90
IF25
IF90
Conditions
TVJ = 25°C to 150°C
TC = 25°C
TC = 90°C
TC = 25°C (diode)
TC = 90°C (diode)
Maximum Ratings
40
V
±20
V
190
A
145
A
125
A
80
A
Symbol
R
DSon
VGSth
IDSS
IGSS
Qg
Q
gs
Qgd
td(on)
t
r
td(off)
t
f
VF
trr
RthJC
R
thJH
Conditions
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
on chip level at
VGS = 10 V
TVJ = 25°C
TVJ = 125°C
VDS = 20 V; ID = 1 mA
VDS = VDSS; VGS = 0 V; TVJ = 25°C
TVJ = 125°C
VGS = ±20 V; VDS = 0 V
VGS= 10 V; VDS = 14 V; ID = 25 A
2.0 2.6 mâ¦
3.2
mâ¦
2
4V
1 µA
0.1
mA
0.2 µA
94
nC
18
nC
29
nC
VGS= 10 V; VDS = 30 V;
ID = 25 A; RG = 10 â¦
40
ns
85
ns
140
ns
90
ns
(diode) IF = 110 A; VGS= 0 V
(diode) IF = 20 A; -di/dt = 100 A/µs; VDS= 20 V
with heat transfer paste
1.0 1.6 V
70
ns
0.85 K/W
1.1
K/W
Applications
AC drives
⢠in automobiles
- electric power steering
- starter generator
⢠in industrial vehicles
- propulsion drives
- fork lift drives
⢠in battery supplied equipment
Features
⢠MOSFETs in trench technology:
- logic level gate control
- low RDSon
- optimized intrinsic reverse diode
⢠package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-2
|
▷ |
German
Russian
Spanish
Italian
Polish
Chinese
Japanese
Korean
French
Portuguese