GWM120-0075P3 Datasheet, PDF (1/3 Pages) IXYS Corporation – Three phase full bridge with Trench MOSFETs in DCB isolated high current package

GWM 120-0075P3
Three phase full bridge
with Trench MOSFETs
in DCB isolated high current package
V_DSS = 75 V
I_D25
= 125 A
R_{DSon typ.} = 3.7 mΩ
L+
G3
G5
G1
S3
S5
S1
L1
L2
L3
G4
G6
G2
S4
S6
S2
L-
MOSFETs
Symbol
V_DSS
V_GS
I_D25
I_D90
I_F25
I_F90
Conditions
T_VJ = 25°C to 150°C
T_C = 25°C
T_C = 90°C
T_C = 25°C (diode)
T_C = 90°C (diode)
Maximum Ratings
75
V
±20
V
125
A
95
A
130
A
85
A
Symbol
R_DSon
V_GSth
I
DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
V_F
t_rr
R_thJC
R_thJH
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
on chip level at
T_VJ = 25°C
V_GS = 10 V; I_D = 60 A T_VJ = 125°C
V_DS = 20 V; I_D = 1 mA
V
DS
=
V;
DSS
V
GS
=
0
V;
T_VJ
=
25°C
T_VJ = 125°C
V_GS = ±20 V; V_DS = 0 V
V_GS= 10 V; V_DS = 60 V; I_D = 25 A
3.7 4.5 mΩ
6.4
mΩ
2
4V
1 µA
0.1
mA
0.2 µA
91
nC
19
nC
28
nC
V_GS= 10 V; V_DS = 30 V;
I_D = 25 A; R_G = 10 Ω
36
ns
56
ns
130
ns
50
ns
(diode) I_F = 60 A; V_GS= 0 V
(diode) I_F = 20 A; -di/dt = 100 A/µs; V_DS = 30 V
with heat transfer paste
0.9 1.4 V
90
ns
0.85 K/W
1.1
K/W
Gate ^Pins
Power ^Pins
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low R_DSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- auxiliary terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
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