GS8DI25104 Datasheet, PDF (1/2 Pages) IXYS Corporation – Gallium Arsenide Schottky Rectifier

Gallium Arsenide Schottky Rectifier
Isolated Surface Mount Package
Preliminary Data
C₁
A₂
C₂
8.
5.
A = Anode, C = Cathode
1.
4.
C₁
A₁
C₂
GS8DI25104
I_DC
=4A
V_RRM = 250 V
C_Junction = 9 pF
Symbol
I_FAV
I_FAV
I_FSM
T_VJ
T_stg
P_tot
Isolation
Isolation
Conditions
T_C = 25°C; DC
T_C = 90°C; DC
T_VJ = 45°C; t_p = 10 ms (50 Hz), sine
T_C = 25°C (20W/device)
(Substrate to Case)
(Diode to Diode)
Symbol
I_R
V_F
C_J
R_thJC
Conditions
T_VJ = 25°C V_R = V_RRM
T_VJ = 125°C V_R = V_RRM
I_F = 2 A;
I_F = 2 A;
T_VJ = 125°C
T_VJ = 25°C
V_R = 100 V; T_VJ = 125°C
Maximum Ratings
04
A
3.5
A
10
A
-55...+175
°C
-55...+150
°C
TBD
W
>2500
V
>600
V
Features
Low forward voltage
Very high switching speed
Trr <15ns
Low junction capacity of GaAs
- low reverse current peak at turn off
Soft turn off
Temperature independent switching
behaviour
High temperature operation capability
Epoxy meets UL 94V-0
Characteristic Values
typ. max.
1.3
mA
1.3
mA
1.3
V
1.2
1.5
V
9
pF
125 C/W
Applications
MHz switched mode power supplies
(SMPS)
High frequency converters
Resonant converters
Pulse test: c Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data per diode unless otherwise specified
IXYSRF reserves the right to change limits, conditions and dimensions.
© 2003 IXYSRF/Directed Energy, Inc.
IXYSRF/Directed Energy, Inc.
2401 Research Blvd. Ste 108, Fort Collins, CO 80526
Phone: [phone], Fax: [phone], www.directedenergy.com
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: [phone], Fax: [phone]