GS150TA25104 Datasheet, PDF (1/2 Pages) IXYS Corporation – Gallium Arsenide Schottky Rectifier

GS150TA25104
GS150TI25104
GS150TC25104
Gallium Arsenide Schottky Rectifier
Isolated Surface Mount Package
Preliminary Data
I_DC
= 4A
V_RRM = 250 V
C_Junction = 9 pF
V_RSM V_RRM
VV
250 250
250 250
250 250
Type
GS150
GS150
GS150
Part
Number
TI25104
TC25104
TA25104
Configuration
Triple
Independent
Triple
Common cathode
Triple
Common anode
A₁
C₁
A₁
C₁
A ^{T R IPL E}
IN D E P E N D E N T
(TI)
2
C₂
TRIPLE
COMMON
CATHODE
A₂
C₂
(TC)
A₃
C₃
A₃
C₃
Symbol
I_FAV
I_FAV
I_FSM
T_VJ
T_stg
P_tot
Isolation
Isolation
Conditions
T_C = 25°C; DC
T_C = 90°C; DC
T_VJ = 45°C; t_p = 10 ms (50 Hz), sine
T_C = 25°C (20W/device)
(Substrate to Case)
(Diode to Diode)
A₁
TRIPLE
A ^{C O M M O N}
ANODE
2
(TA)
A₃
C₁
C₂
C_{3 A = Anode, C = Cathode}
Maximum Ratings
04
A
3.5
A
10
A
-55...+175
°C
-55...+150
°C
30
W
>2500
V
>600
V
Features
● _{Low forward voltage}
● _{Very high switching speed}
Trr <15ns
● _{Low junction capacity of GaAs}
- low reverse current peak at turn off
● _{Soft turn off}
● _{Temperature independent switching}
behaviour
● _{High temperature operation capability}
● _{Epoxy meets UL 94V-0}
Symbol
I_R
V_F
C_J
R_thJC
Weight
Conditions
T_VJ = 25°C V_R = V_RRM
T_VJ = 125°C V_R = V_RRM
I_F = 2 A;
I_F = 2 A;
T_VJ = 125°C
T_VJ = 25°C
V_R = 100 V; T_VJ = 125°C
Characteristic Values
typ. max.
1.3
mA
1.3
mA
1.3
V
1.2
1.5
V
9
pF
5
K/W
2
g
Applications
● _{MHz switched mode power supplies}
(SMPS)
● _{High frequency converters}
● _{Resonant converters}
Pulse test: Pulse Width = 5 ms, Duty Cycle < 2.0 %
Data per diode unless otherwise specified
IXYSRF reserves the right to change limits, conditions and dimensions.
© 2003 IXYSRF/Directed Energy, Inc.
IXYSRF/Directed Energy, Inc.
2401 Research Blvd. Ste 108, Fort Collins, CO 80526
Phone: [phone], Fax: [phone], www.directedenergy.com
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim, Germany
Phone: [phone], Fax: [phone]