GMM3X60-015X2 Datasheet, PDF (1/3 Pages) IXYS Corporation – Three phase full Bridge with Trench MOSFETs in DCB isolated high current package

Three phase full Bridge
with Trench MOSFETs
in DCB isolated high current package
GMM3x60-015X2
V_DSS = 150 V
I_D25
= 57 A
R = _{DSon typ.} 17 mW
L1+
L2+
L3+
G1
G3
G5
S1
S3
S5
L1
L2
L3
G2
G4
G6
S2
S4
S6
L1-
L2-
L3-
MOSFETs
Symbol Conditions
V_DSS
V_GS
T_VJ = 25°C to 150°C
I_D25
I_D90
I_D110
I_F25
I_F90
I_F110
Symbol
T_C = 25°C
T_C = 90°C
T_C = 110°C
T_C = 25°C (diode)
T_C = 90°C (diode)
T_C = 110°C (diode)
Conditions
Maximum Ratings
150 V
± 20
V
57 A
45 A
43 A
tbd A
tbd A
tbd A
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
R 1)
DSon
V_GS(th)
I_DSS
I_GSS
on chip level at
V_GS = 10 V
V_DS = 20 V; I_D = 1 mA
V_DS = V_DSS; V_GS = 0 V
V_GS = ± 20 V; V_DS = 0 V
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 25°C
T_VJ = 125°C
17
36
2.5
0.1
Q_g
tbd
Q_gs
V_GS = 10 V; V_DS = 65 V; I_D = 50 A
tbd
Q_gd
tbd
t_d(on)
tbd
t_r
t_d(off)
t_f
E_on
E_off
inductive load
V_GS = 10 V; V_DS = 96 V
I_D = 50 A; R_G = 33 Ω;
T_J = 125°C
tbd
tbd
tbd
tbd
tbd
E_recoff
tbd
R_thJC
R_thJH
with heat transfer paste (IXYS test setup)
1.3
1) _{VDS = ID·(RDS(on) + 2RPin to ) Chip}
22 mW
mW
4.5 V
1 µA
mA
0.2 µA
nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
1.0 K/W
1.6 K/W
Applications
AC drives
• in automobiles
- electric power steering
- starter generator
• in industrial vehicles
- propulsion drives
- fork lift drives
• in battery supplied equipment
Features
• MOSFETs in trench technology:
- low RDSon
- optimized intrinsic reverse diode
• package:
- high level of integration
- high current capability
- aux. terminals for MOSFET control
- terminals for soldering or welding
connections
- isolated DCB ceramic base plate
with optimized heat transfer
• Space and weight savings
IXYS reserves the right to change limits, test conditions and dimensions.
© 2011 IXYS All rights reserved
20110307
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