FUE30-12N1 Datasheet, PDF (1/3 Pages) IXYS Corporation – Fast Three Phase Rectifier Bridge in ISOPLUS i4-PACTM

Fast Three Phase
Rectifier Bridge
in ISOPLUS i4-PAC^TM
FUE 30-12N1
V_RRM = 1200 V
I_D(AV)M = 30 A
t_rr = 130 ns
1
3
4
1
5
5
2
Rectifier Bridge
Symbol
V_RRM
I_FAV
I_D(AV)M
I_FSM
E_AS
P_tot
Conditions
Maximum Ratings
1200 V
T_C = 90°C; sine 180° (per diode)
T_C = 90°C
(bridge)
T_VJ = 25°C; t = 10 ms; sine 50 Hz
I_AS= 9 A; L_AS=180 µH; T_C = 25°C; non repetitive
T_C = 25°C
(per diode)
12 A
30 A
80 A
8.7 mJ
50 W
Symbol
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
V_F
I_F = 10 A; T_VJ = 25°C
2.2
T_VJ = 125°C
1.6
I_R
V_R = V_RRM; T_VJ = 25°C
T_VJ = 125°C
0.1
I
RM
I
F
=
15
A;
di /dt
F
=
-400
A/µs;
T_VJ
=
125°C
16
t_rr
V_R = 600 V
130
R_thJC
(per diode)
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
2.6 V
V
0.1 mA
mA
A
ns
2.3 K/W
Features
• HiPerFRED^TM Epitaxial Diodes
- fast and soft reverse recovery –
low switching losses
- avalanche rated
- low leakage current
• ISOPLUS i4-PAC^TM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
• high frequency rectifiers, output
rectifiers of switched mode power
supplies
• three phase mains rectifiers with
minimized electromagnetic emissions
IXYS reserves the right to change limits, test conditions and dimensions.
© 2005 IXYS All rights reserved
1-3