FSS100-008A Datasheet, PDF (1/2 Pages) IXYS Corporation – Dual Power Schottky Diode

Advanced Technical Information
Dual Power Schottky
Diode
in ISOPLUS i4-PAC^TM
FSS 100-008A
V_RRM = 80 V
V_F = 0.9 V
I_F(AV)M = 90 A
1
3
1
3
5
5
Diodes
Symbol
V_RRM
I_FAV
I_F(AV)M
P_tot
Symbol
V_F
I_R
R_thJC
Features
• Schottky diodes
Conditions
Maximum Ratings
- very low forward voltage
80
V
- extremely fast switching
- blocking capability optimized for
T_C = 90°C; sine 180°
T_C = 90°C; d = 0.5 rectangular
85
A
elevated temperature
90
A ^{• ISOPLUS i4-PACTM package}
- DCB isolated back surface
T_C = 25°C
(per diode)
100
W
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
Conditions
I_F = 75 A; T_VJ = 25°C
T_VJ = 125°C
V_R = V_RRM; T_VJ = 25°C
T_VJ = 125°C
(per diode)
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
n _{0.9 1.0 V}
g _0.8
V
si _{2 mA}
2.5
mA
new ^{de1.4 K/W}
- industry standard outline
Applications
• for use in
- automotive drives and converters
- hand held tools
- low voltage power supplies
- battery chargers
- solar converters
• operating
- as free wheeling diode of choppers
for supply of motors or transformers
- as high frequency secondary rectifier
- anti paralleled to MOSFETs
complementing their intrinsic body
diode
t ^for _{Recommended replacement:}
No ^{DSSS 35-008AR}
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2007 IXYS All rights reserved
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