FMM75-01F Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFETTM Power MOSFET Phaseleg Topology in ISOPLUS i4-PACTM

FMM 75-01F
HiPerFET^TM Power MOSFET
Phaseleg Topology
in ISOPLUS i4-PAC^TM
I_D25
= 75 A
V_DSS = 100 V
R_DSontyp. = 18 mΩ
Preliminary data
3
T1
5
4
T2
1
2
1
5
MOSFET T1/T2
Symbol
V_DSS
V_GS
I_D25
I_D90
I_F25
I_F90
dv/dt
E_AR
Conditions
Maximum Ratings
T_VJ = 25°C to 150°C
100
V
±20
V
T_C = 25°C
T_C = 90°C
75
A
50
A
(body diode) T_C = 25°C
(body diode) T_C = 90°C
100
A
60
A
V_DS < V_DSS; I_F ≤ 300A;⎮di_F/dt⎮≤ 100A/µs; R_G = 2 Ω
T_VJ = 150°C
5 V/ns
T_C = 25°C
30
mJ
Symbol
R
DSon
V_GSth
I_DSS
I
GSS
Q
g
Q_gs
Q
gd
t_d(on)
t_r
t
d(off)
t_f
V_F
t_rr
R
thJC
R_thJH
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V
GS
=
10
V;
I_D
=
I_D90
V_DS = 20 V; I_D = 4 mA
V_DS = V_DSS; V_GS = 0 V; T_VJ = 25°C
T_VJ = 125°C
V = ±20 V; V = 0 V
GS
DS
V_GS= 10 V; V_DS = 0.5 • V_DSS; I_D = I_D90
18 25 mΩ
2
4V
0.25
0.3 mA
mA
200 nA
180
nC
35
nC
85
nC
V_GS= 10 V; V_DS = 0.5 • V_DSS
I_D = I_D90; R_G = 2 Ω
20
ns
60
ns
80
ns
60
ns
(body diode) I_F = 75 A; V_GS = 0 V
(body diode) I_F = 37.5A; -di/dt = 100A/µs; V_DS = 25V
with heat transfer paste
1.2
300
0.93
1.5 V
ns
0.5 K/W
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
Features
• HiPerFET^TM technology
- low R_DSon
- low gate charge for high frequency
operation
- unclamped inductive switching (UIS)
capability
- dv/dt ruggedness
- fast intrinsic reverse diode
• ISOPLUS i4-PAC^TM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered E 72873
Applications
• drives and power supplies
• battery or fuel cell powered
• automotive, industrial vehicle etc.
• secondary side of mains power
supplies
1-2