FMM65-015P Datasheet, PDF (1/2 Pages) IXYS Corporation – Trench Power MOSFET

Trench
Power MOSFET
-Phaseleg Topology-
in ISOPLUS i4-PAC^TM
Advanced Technical Information
FMM 65-015P
I
D25
= 65 A
V_DSS = 150 V
R_DSon = 12.5 mΩ
T1
T2
1
5
MOSFET T1/T2
Symbol
V_DSS
V_GS
I_D25
I_D90
I_F25
I_F90
Conditions
T_VJ = 25°C to T_VJmax
T_C = 25°C
T_C = 90°C
(diode) T_C = 25°C
(diode) T_C = 90°C
Maximum Ratings
150
V
±20
V
65
A
50
A
65
A
50
A
Symbol
R_DSon
V_GSth
I_DSS
I
GSS
Q_g
Q_gs
Q
gd
t_d(on)
t_r
t_d(off)
t_f
V_F
t_rr
R
thJC
R_thJH
Conditions
Characteristic Values
(T
VJ
=
25°C,
unless
otherwise
specified)
min. typ. max.
V_GS = 10 V; I_D = I_D90
V_DS = 20 V; I_D = 1 mA;
V_DS = V_DSS; V_GS = 0 V; T_VJ = 25°C
T_VJ = 125°C
V = ±20 V; V = 0 V
GS
DS
V = 10 V; V = 120 V; I = 75 A
GS
DS
D
12.5
2
0.1
230
45
90
22 mΩ
4V
10 µA
mA
200 nA
nC
nC
nC
V_GS= 10 V; V_DS = 0.5 • V_DSS;
I_D = 30 A; R_G = 5.6 Ω
35
ns
80
ns
230
ns
100
ns
(diode) I_F = 32.5 A; V_GS = 0 V
(diode)
I
F
=
20
A;
-di/dt
=
100
A/µs;
V_DS
=
30
V
with heat transfer paste
0.9 1.3 V
130
ns
0.6 K/W
1.2
K/W
Features
• trench MOSFET
- very low on state resistance R
DSon
- fast switching
- fast body diode
• ISOPLUS i4-PAC^TM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
Applications
• automotive and industrial vehicles
- AC drives
- choppers - replacing series resistors
for DC drives, heating etc.
- DC-DC converters
- electronic switches -replacing relays
and fuses
• power supplies
- DC-DC converters
- solar inverters
• battery supplied systems
- choppers or inverters for drives
- battery chargers
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]