FMM200-004PL Datasheet, PDF (1/2 Pages) IXYS Corporation – Trench Power MOSFET

FMM 200-004PL
Trench Power MOSFET
logic level gate control
Phaseleg Topology
in ISOPLUS i4-PAC^TM
Preliminary data
3
T1
5
4
T2
1
2
I_D25
= 200 A
V_DSS = 40 V
R_{DSon typ.} = 2.8 mΩ
1
5
MOSFET T1/T2
Symbol
V_DSS
V_GS
I_D25
I_D90
I_F25
I_F90
Conditions
T_VJ = 25°C to T_VJmax
T_C = 25°C
T_C = 90°C
(body diode) T_C = 25°C
(body diode) T_C = 90°C
Maximum Ratings
40
V
±20
V
200
A
150
A
110
A
70
A
Symbol
R
DSon
V_GSth
I_DSS
I_GSS
Q_g
Q
gs
Q_gd
t_d(on)
t
r
t_d(off)
t
f
V_F
t_rr
R_thJC
R
thJS
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V
GS
=
10
V;
I_D
=
100
A
V
DS
=
20
V;
I_D
=
1
mA
V_DS = 40 V; V_GS = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_GS = ±20 V; V_DS = 0 V
V_GS= 5 V; V_DS = 14 V; I_D = 25 A
2.8 3.9 mΩ
1.1
2V
1 µA
0.1
mA
200 nA
82
nC
17
nC
25
nC
V_GS= 5 V; V_DS = 30 V
I_D = 25 A; R_G = 10 Ω
70
ns
270
ns
260
ns
190
ns
(body diode) I_F = 100 A; V_GS = 0 V
1.2 1.7 V
(body diode) I_F = 20A; -di/dt = 100A/µs; V_DS = 20V 70
ns
with heat transfer paste
1.0 K/W
1.5
K/W
Features
• trench MOSFET
- logic level gate control
- very low on state resistance R_DSon
- fast switching
- fast body diode
• ISOPLUS i4-PAC^TM package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
- UL registered, E 72873
Applications
• automotive
- AC drives - starter generator
for 12/14V etc.
- choppers - replacing series resistors
for DC drives, heating etc.
- DC-DC converters
- electronic switches -replacing relays
and fuses
• power supplies
- DC-DC converters
- solar inverters
- converters for fuel cells
• battery supplied systems
- choppers or inverters for drives in
hand held tools
- battery chargers
IXYS reserves the right to change limits, test conditions and dimensions.
© 2004 IXYS All rights reserved
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