FMD47-06KC5 Datasheet, PDF (1/3 Pages) IXYS Corporation – CoolMOS Pow er MOSFET with HiPerDyn FRED Buck and Boost Topologies

Advanced Technical Information
FMD 47-06KC5
FDM 47-06KC5
CoolMOS^{™ 1)} Pow er MOSFET
with HiPerDyn™ FRED
Buck and Boost Topologies
I_D25
= 47 A
V_DSS
= 600 V
R_{DS(on) max} = 0.045 Ω
Electrically isolated back surface
3
2500 V electrical isolation
N-Channel Enhancement Mode
Low R_DSon, high V_DSS MOSFET
4
Ultra low gate charge
1
3
T
D⁵
4
D
2
T2
FMD
FDM
MOSFET T
Symbol Conditions
V_DSS
V_GS
T_VJ = 25°C
I_D25
I_D90
E_AS
E_AR
dV/dt
T_C = 25°C
T_C = 90°C
single pulse
repetitive
I_D = 11 A; T_C = 25°C
MOSFET dV/dt ruggedness V_DS = 0...480 V
Maximum Ratings
600 V
± 20
V
47 A
32 A
1950 mJ
3 mJ
50 V/ns
Symbol
R_DSon
V_GS(th)
I_DSS
I_GSS
C_iss
C_oss
Q_g
Q_gs
Q_gd
t_d(on)
t_r
t_d(off)
t_f
E_on
E_off
E_{rec off}
R_thJC
R_thCH
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V_GS = 10 V; I_D = 44 A
V_DS = V_GS; I_D = 3 mA
V_DS = V_DSS; V_GS = 0 V
V_GS = ± 20 V; V_DS = 0 V
V_GS = 0 V; V_DS = 100 V
f = 1 MHz
T_VJ = 25°C
T_VJ = 125°C
V_GS = 0 to 10 V; V_DS = 400 V; I_D = 44 A
V_GS = 10 V; V_DS = 400 V
I_D = 44 A; R_G = 3.3 Ω
with heat transfer paste
40
2.5
3
50
6800
320
150
35
50
30
20
100
10
tbd
tbd
tbd
0.25
45 mΩ
3.5
V
10 µA
µA
100 nA
pF
pF
190 nC
nC
nC
ns
ns
ns
ns
mJ
mJ
mJ
0.45 K/W
K/W
ISOPLUS i4^™
1
E72873
5
q
isolated back
surface
Features
• Silicon chip on Direct-Copper-Bond
substrate
- high power dissipation
- isolated mounting surface
- 2500 V electrical isolation
- low drain to tab capacitance (< 40 pF)
• Fast CoolMOS^{™ 1)} power MOSFET 4^th
generation
- high blocking capability
- lowest resistance
- avalanche rated for unclamped
inductive switching (UIS)
- low thermal resistance
due to reduced chip thickness
• Enhanced total power density
• HiPerDyn™ FRED
- consisting of series connected diodes
- enhanced dynamic behaviour for
high frequency operation
Applications
• Switched mode power supplies
(SMPS)
• Uninterruptible power supplies (UPS)
• Power factor correction (PFC)
Advantages
• Easy assembly:
no screws or isolation foils required
• Space savings
• High power density
• High reliability
1) _CoolMOS™ _{is a trademark of}
Infineon Technologies AG.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2009 IXYS All rights reserved
20090209a
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