FII30-12D Datasheet, PDF (1/2 Pages) IXYS Corporation – Fast IGBT Chopper in ISOPLUS i4-PACTM

Advanced Technical Information
Fast IGBT Chopper
in ISOPLUS i4-PAC^TM
FII 30-12D
I
= 30 A
C25
V_CES
= 1200 V
V_{CE(sat) typ.} = 2.3 V
1
5
IGBT
Symbol
V_CES
V_GES
I_C25
I_C90
I_CM
V_CEK
t_SC
(SCSOA)
P_tot
Symbol
V
CE(sat)
V_GE(th)
I_CES
I_GES
t_d(on)
t
r
t_d(off)
t
f
E_on
E_off
C
ies
Q_Gon
R_thJC
Conditions
Maximum Ratings
T_VJ = 25°C to 150°C
1200
V
± 20
V
T_C = 25°C
T_C = 90°C
30
A
18
A
V_GE
=
±15
V;
R
G
=
82
Ω;
T_VJ
=
125°C
RBSOA, Clamped inductive load; L = 100 µH
35
A
V_CES
V_CE = V_CES; V_GE = ±15 V; R_G = 82 Ω; T_VJ = 125°C
non-repetitive
10
µs
T_C = 25°C
125
W
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
I
C
=
20
A;
V
GE
=
15
V;
T_VJ
=
25°C
T_VJ = 125°C
I_C = 0.6 mA; V_GE = V_CE
V_CE = V_CES; V_GE = 0 V; T_VJ = 25°C
T_VJ = 125°C
V_CE = 0 V; V_GE = ± 20 V
Inductive load, T_VJ = 125°C
V = 600 V; I = 20 A
CE
C
V_GE = ±15 V; R_G = 82 Ω
2.3 3.0 V
2.6
V
4.5
6.5 V
0.9 mA
0.9
mA
200 nA
100
ns
75
ns
500
ns
70
ns
3.0
mJ
2.4
mJ
V = 25 V; V = 0 V; f = 1 MHz
CE
GE
V_CE = 600V; V_GE = 15 V; I_C = 18 A
1000
70
pF
nC
1.0 K/W
Features
• NPT IGBT
- low saturation voltage
- no latch up
- positive temperature coefficient for
easy paralleling
• HiPerFRED^TM diode
- fast reverse recovery
- low operating forward voltage
- low leakage current
• ISOPLUS i4-PAC^TM package
- isolated back surface
- enlarged creepage towards heatsink
- application friendly pinout
- low inductive current path
- high reliability
- industry standard outline
Applications
• single phaseleg
- buck-boost chopper
• H bridge
- power supplies
- induction heating
- four quadrant DC drives
- controlled rectifier
• three phase bridge
- AC drives
- controlled rectifier
© 2000 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: [phone], Fax: [phone]
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: [phone], Fax: [phone]