FCC21-12IO Datasheet, PDF (1/2 Pages) IXYS Corporation – Phase Control Thyristors

FCC 21-12io
Phase Control Thyristors
-Phaseleg Topology-
in ISOPLUS i4-PAC^TM
Preliminary Data
V_RSM
V_DSM
V
V_RRM
V_DRM
V
Type
1300 1200 FCC 21-12io
V =V
DRM
RRM
I_T(AV)
I_TSM
= 1200 V
= 21 A
= 300 A
1
5
Thyristors
Symbol
V_DRM, V_RRM
I_T(AV)
I_T(AV)
I_TSM
(di/dt)_cr
(dv/dt)_cr
Conditions
sine 180°; T_C = 90°C
square; d = ¹/₃; T_C = 90°C
sine 180°; t = 10 ms; V_R = 0 V; T_VJ = 25°C
T_VJ = T_VJM
repetitive, I_T = 40 A
f = 50 Hz, t_P = 200 µs
V_D = ²/₃ V_DRM
I_G = 0.3 A
di_G/dt = 0.3 A/µs
non repetitive, I_T = 30 A
T_VJ = T_VJM;
V_DR = ²/₃ V_DRM
R_GK = ∞; method 1 (linear voltage rise)
Maximum Ratings
1200
V
21
A
20
A
300
A
150 A/µs
500 A/µs
1000 V/µs
Symbol
Conditions
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
V_T
V_GT
I_GT
V_GD
I_GD
I_L
I_H
t_gd
I_R, I_D
R_thJC
R_thJH
I_T = 30 A; T_VJ = 25°C
T_VJ =125°C
V_D = 6 V
T_VJ = T_VJM; V_D = ²/₃ V_DRM
t_P = 10 µs; V_D = 6 V
I_G = 0.3 A; di_G/dt = 0.3 A/µs
V_D = 6 V; R_GK = ∞
V_D = ½ V_DRM; V_D = 6 V
I_G = 0.3 A; di_G/dt = 0.3 A/µs
V_R = V_RRM; V_D = V_DRM;T_VJ = 25°C
T_VJ = 125°C
DC current
1.3 V
1.3
V
1.4 V
55 mA
0.2 V
5 mA
150 mA
100 mA
2 µs
50 µA
0.5
mA
1.0 K/W
1.32
K/W
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
Features
• Thyristor
- for line frequency
-chip technology for long term
stability
• ISOPLUS i4-PAC^TM package
- isolated back surface
- UL registered E 72873
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
• controlled rectifiers
- power supplies
- drives
• AC switches
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