FBS16-06SC Datasheet, PDF (1/2 Pages) IXYS Corporation – Silicon Carbide Schottky Rectifier Bridge

Silicon Carbide
Schottky
Rectifier Bridge
in ISOPLUS i4-PAC^TM
Advanced Technical Information
FBS 16-06SC
V_RRM = 600 V
I_D(AV)M = 11 A
C_junction = 21 pF
1
5
Rectifier Bridge
Symbol
V_RRM
I_FAV
I_D(AV)M
I_FSM
P_tot
Conditions
T_C = 90°C; sine 180° (per diode)
T_C = 90°C
T_VJ = 25°C; t = 10 ms; sine 50 Hz
T_C = 25°C
(per diode)
Maximum Ratings
600
V
5
A
11
A
20
A
27
W
Symbol
V_F
I
R
C_J
R_thJC
R_thJS
Conditions
I_F = 6 A;
V =V ;
R
RRM
V_R = 400 V;
(per diode)
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 25°C
T_VJ = 125°C
T_VJ = 125°C
Characteristic Values
(T_VJ = 25°C, unless otherwise specified)
min. typ. max.
1.5 1.8 V
1.6
V
0.2 mA
0.05
mA
21
pF
5.6 K/W
8.6
K/W
Features
• Silicon Carbide Schottky Diodes
- no reverse recovery at turn off - only
charge of junction capacity - soft turn
off waveform
- no forward recovery at turn on
- switching behaviour independent of
temperature
- low leakage current
• ISOPLUS i4-PAC(TM) package
- isolated back surface
- low coupling capacity between pins
and heatsink
- enlarged creepage towards heatsink
- application friendly pinout
- high reliability
- industry standard outline
Applications
• output rectifiers of high end switched
mode power supplies
• other high frequency rectifiers
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
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