DWN Datasheet, PDF (1/22 Pages) IXYS Corporation – Rectifier Diodes & FRED

Contents
Symbols and Definitions
Nomenclature
General Information
Assembly Instructions
FRED, Rectifier Diode and Thyristor Chips in Planar Design
IGBT Chips
G-Series, Low V_CE(sat) B2 Types
G-Series, Fast C2 Types
S-Series, SCSOA Capability, Fast Types
E-Series, Improved NPT³ technology
V_CES
600 ...1200 V
600 V
600 V
1200 ... 1700 V
I_C
7 ... 20 A
7 ... 20 A
10 ... 20 A
20 ... 150 A
MOSFET Chips
HiPerFET^TM Power MOSFET
PolarHT^TM MOSFET, very Low R_DS(on)
P-Channel Power MOSFET
N-Channel Depletion Mode MOSFET
Layouts
V_DSS
70 ...1200 V
55 ... 300 V
-100 ...-600 V
500 ...1000 V
R_DS(on)
0.005 ... 4.5 Ω
0.015 ... 0.135 Ω
0.06 ... 1.2 Ω
30 ... 110 Ω
Bipolar Chips
Rectifier Diodes
FREDs
Low Leakage FREDs
SONIC-FRD^TM Diodes
GaAs Schottky Diodes
Schottky Diodes
Phase Control Thyristors
Fast Rectifier Diodes
V_RRM / V_DRM
1200 ... 1800 V
600 ... 1200 V
200 ... 1200 V
600 ... 1800 V
100 ... 600 V
8 ... 200 V
800 ... 2200 V
1600 ... 1800 V
I / I _{F(AV)M T(AV)M}
12 ... 416 A
8 ... 244 A
9 ... 148 A
12 ... 150 A
3.5 ... 25 A
28 ... 145 A
15 ... 540 A
10 ... 26 A
Direct Copper Bonded (DCB), Direct Alu Bonded (DAB) Ceramic Substrates
What is DCB/DAB?
DCB Specification
Page
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IXYS reserves the right to change limits, test conditions and dimensions
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