DSP8-08AC Datasheet, PDF (1/1 Pages) IXYS Corporation – Phase-leg Rectifier Diode ISOPLUS220

ADVANCE TECHNICAL INFORMATION
DSP 8
Phase-leg Rectifier Diode
ISOPLUS220^TM
Electrically Isolated Back Surface
V_RRM = 800/1200 V
I_F(AV)M = 2 x 11 A
ISOPLUS220^TM
V_RSM
V
900
1300
V_RRM
V
800
1200
Type
DSP 8-08AC
DSP 8-12AC
1
2
1
23
3
* Patent pending
Isolated back surface *
Symbol
I_FRMS
I_F(AV)M
I_FSM
I²t
T_VJ
T_VJM
T_stg
T_L
V_ISOL
F_C
Weight
Test Conditions
T_VJ = T_VJM
T_case = 100°C; 180° sine
T_VJ = 45°C; t = 10 ms
t = 8.3 ms
T_VJ = 150°C; t = 10 ms
t = 8.3 ms
T_VJ = 45°C
T_VJ = 150°C;
t = 10 ms
t = 8.3 ms
t = 10 ms
t = 8.3 ms
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
(50 Hz), sine
(60 Hz), sine
1.6 mm (0.063 in) from case for 10 s
50/60 Hz RMS; I_ISOL ≤ 1 mA
Mounting Force
Maximum Ratings
30
A
2 x 11
A
100
A
105
A
85
A
90
A
50
A²s
45
A²s
35
A²s
30
A²s
-40...+150
°C
150
°C
-55...+150
°C
260
°C
2500
V~
11...65 / 2.5..15
N/lb
2
g
Features
l _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
l _{For single and three phase bridge}
configuration
l _{Low cathode to tab capacitance (<15pF)}
l _{Planar passivated chips}
l _{Epoxy meets UL 94V-0}
ISOPLUS220 Outline
Symbol
I_R^Q
V_F^R
V_T0
r_T
R_thJC
R_thCK
a
Test Conditions
V_R = V_RRM; T_VJ = 25°C
T_VJ = 150°C
I_F = 10 A; T_VJ = 25°C
T_VJ = 125°C
For power-loss calculations only
T_VJ = T_VJM
DC current
DC current (with heatsink compound)
Maximum allowable acceleration
Characteristic Values
≤
10
µA
≤
0.7
mA
≤
1.22
V
≤
1.26
V
0.8
V
41
mΩ
1.8
K/W
typ.
0.6
K/W
100
m/s²
Notes: Data given for T_VJ = 25^OC and per diode unless otherwise specified
Q Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
RPulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
98820 (04/01)