DSEP30-06CR Datasheet, PDF (1/1 Pages) IXYS Corporation – HiPerDynFREDTM Epitaxial Diode with soft recovery (Electrically Isolated Back Surface)

DSEP 30-06CR
HiPerDynFRED^TM Epitaxial Diode
with soft recovery
(Electrically Isolated Back Surface)
I_FAV = 30 A
V_RRM = 600 V
t_rr = 20 ns
Preliminary Data
V_RSM
V
V_RRM
V
Type
600
600
DSEP 30-06CR
A
C
Symbol
I_FRMS
I_FAVM
I_FRM
I_FSM
E_AS
I_AR
T_VJ
T_VJM
T_stg
P_tot
V_ISOL
F_C
Weight
Conditions
Maximum Ratings
70
A
T_C = 135°C; rectangular, d = 0.5
30
A
t_P < 10 µs; rep. rating, pulse width limited by T_VJM
tbd
A
T_VJ = 45°C; t_p = 10 ms (50 Hz), sine
300
A
T_VJ = 25°C; non-repetitive
I_AS = 3 A; L = 180 µH
1.2
mJ
V_A = 1.5·V_R typ.; f = 10 kHz; repetitive
0.3
A
-55...+175
°C
175
°C
-55...+150
°C
T_C = 25°C
50/60 Hz RMS; I_ISOL £ 1 mA
mounting force with clip
250
W
2500
V~
20...120
N
typical
6
g
Symbol
I_R x
V_F y
R_thJC
R_thCH
t_rr
I_RM
Conditions
T_VJ = 25°C V_R = V_RRM
T_VJ = 150°C V_R = V_RRM
I_F = 30 A; T_VJ = 150°C
T_VJ = 25°C
with heatsink compound
I_F = 1 A; -di/dt = 200 A/µs;
V_R = 30 V; T_VJ = 25°C
V_R = 100 V; I_F = 50 A; -di_F/dt = 100 A/µs
T_VJ = 100°C
Characteristic Values
typ. max.
250
µA
1
mA
1.79
V
2.46
V
0.6
K/W
0.25
K/W
20
ns
4.5
7.0
A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
ISOPLUS 247^TM
C
A
Isolated back surface *
A = Anode, C = Cathode
* Patent pending
Features
q _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
q _{Low cathode to tab capacitance (<25pF)}
q _{International standard package}
q _{Planar passivated chips}
q _{Very short recovery time}
q _{Extremely low switching losses}
q _{Low IRM-values}
q _{Soft recovery behaviour}
q _{Epoxy meets UL 94V-0}
q _{Isolated and UL registered E153432}
Applications
q _{Antiparallel diode for high frequency}
switching devices
q _{Antisaturation diode}
q _{Snubber diode}
q _{Free wheeling diode in converters}
and motor control circuits
q _{Rectifiers in switch mode power}
supplies (SMPS)
q _{Inductive heating}
q _{Uninterruptible power supplies (UPS)}
q _{Ultrasonic cleaners and welders}
Advantages
q _{Avalanche voltage rated for reliable}
operation
q _{Soft reverse recovery for low EMI/RFI}
q _{Low IRM reduces:}
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
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