DSEP2X31-06B Datasheet, PDF (1/4 Pages) IXYS Corporation – HiPerFRED

DSEP2x31-06A
HiPerFRED
High Performance Fast Recovery Diode
Low Loss and Soft Recovery
Parallel legs
Part number
DSEP2x31-06A
V_RRM = 600 V
I_FAV = 2x 30 A
t _rr =
35 ns
Features / Advantages:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
Applications:
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
Backside: isolated
Package:
● Housing: SOT-227B (minibloc)
●rIndustry standard outline
●rCu base plate internal DCB isolated
●rIsolation Voltage 3000 V
●rEpoxy meets UL 94V-0
●rRoHS compliant
Symbol
V_RRM
I_R
V_F
I_FAV
V_F0
r_F
R _thJC
T _VJ
P_tot
I _FSM
I _RM
t _rr
Definition
Conditions
max. repetitive reverse voltage
reverse current
forward voltage
V_R =
V_R =
I_F =
I_F =
IF =
I_F =
600 V
600 V
30 A
60 A
30 A
60 A
average forward current
rectangular
threshold voltage
slope resistance
for power loss calculation only
d = 0.5
thermal resistance junction to case
virtual junction temperature
total power dissipation
max. forward surge current
max. reverse recovery current
t = 10 ms (50 Hz), sine
reverse recovery time
IF = 30 A; V_R = 300 V
-diF/dt = 400 A/µs
C_J
junction capacitance
V_R = 400 V; f = 1 MHz
T_{VJ = 25 °C}
T_VJ = 25°C
T_VJ = 150 °C
T_VJ = 25°C
T_VJ = 150°C
T_C = 95°C
T_VJ = 150 °C
T_C = 25°C
T_VJ = 45°C
T_VJ = 25 °C
T_VJ = 100 °C
T_VJ = 25 °C
T_VJ = 100 °C
T_VJ = 25°C
Ratings
min. typ. max. Unit
600 V
250 µA
1 mA
1.58 V
1.88 V
1.23 V
1.48 V
30 A
0.98 V
8.2 mΩ
1.15 K/W
-40
150 °C
100 W
250 A
12
A
20
A
30
ns
90
ns
26
pF
IXYS reserves the right to change limits, conditions and dimensions.
© 2010 IXYS all rights reserved
Data according to IEC 60747and per diode unless otherwise specified
20100531a