DSEP15-06B Datasheet, PDF (1/1 Pages) IXYS Corporation – HiPerFREDTM Epitaxial Diode with soft recovery

DSEP 15-06B
HiPerFRED^TM Epitaxial Diode
with soft recovery
Preliminary data
I_FAV = 15 A
V_RRM = 600 V
t_rr = 25 ns
V
RSM
V
600
V
RRM
V
600
Type
DSEP 15-06B
TO-220 AC
A
C
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
D4
Symbol
I_FRMS
I_FAVM
I_FSM
E_AS
I_AR
T_VJ
T_VJM
T_stg
P_tot
M_d
Weight
Conditions
T_C = 130°C; rectangular, d = 0.5
T_VJ = 45°C; t_p = 10 ms (50 Hz), sine
T_VJ = 25°C; non-repetitive; I_AS = 1 A;
L = 100 µH
L = 20 mH
V_A = 1.5·V_R typ.; f = 10 kHz; repetitive
T_C = 25°C
mounting torque
typical
Maximum Ratings
35
A
15
A
110
A
0.1
mJ
20
mJ
0.1
A
-55...+175
°C
175
°C
-55...+150
°C
95
W
0.4...0.6
Nm
2
g
Symbol
I_R x
V_F y
R_thJC
R_thCH
t_rr
I_RM
Conditions
T_VJ = 25°C V_R = V_RRM
T_VJ = 150°C V_R = V_RRM
I_F = 15 A; T_VJ = 150°C
T_VJ = 25°C
I_F = 1 A; -di/dt = 100 A/µs;
V_R = 30 V; T_VJ = 25°C
V_R = 100 V; I_F = 25 A; -di_F/dt = 100 A/µs
T_VJ = 100°C
Characteristic Values
typ. max.
100
µA
0.5
mA
1.55
V
2.52
V
1.6 K/W
0.5
K/W
25
30
ns
2.6
A
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
Features
G _{International standard package}
G _{Planar passivated chips}
G _{Very short recovery time}
G _{Extremely low switching losses}
G _{Low IRM-values}
G _{Soft recovery behaviour}
G _{Epoxy meets UL 94V-0}
Applications
G _{Antiparallel diode for high frequency}
switching devices
G _{Antisaturation diode}
G _{Snubber diode}
G _{Free wheeling diode in converters}
and motor control circuits
G _{Rectifiers in switch mode power}
supplies (SMPS)
G _{Inductive heating}
G _{Uninterruptible power supplies (UPS)}
G _{Ultrasonic cleaners and welders}
Advantages
G _{Avalanche voltage rated for reliable}
operation
G _{Soft reverse recovery for low}
EMI/RFI
G _{Low IRM reduces:}
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages D4 - 85-86
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