DSEP12-12B Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFRED Epitaxial Diode with soft recovery

HiPerFRED^TM Epitaxial Diode
with soft recovery
DSEP12-12B
I_FAV = 15 A
V_RRM = 1200 V
t_rr = 35 ns
V_RSM
V
1200
V_RRM
V
Type
1200 DSEP 12-12B
A
C
Symbol
I_FRMS
I_FAVM
I_FSM
E_AS
I_AR
T_VJ
T_VJM
T_stg
P_tot
M_d
Weight
Conditions
T_C = 120°C; rectangular, d = 0.5
T_VJ = 45°C; tp = 10 ms (50 Hz), sine
T_VJ = 25°C; non-repetitive
I_AS = 9 A; L = 180 µH
V_A = 1.25·V_R typ.; f = 10 kHz; repetitive
T_C = 25°C
mounting torque
typical
Maximum Ratings
35 A
15 A
90 A
8.7 mJ
0.9 A
-55...+175 °C
175 °C
-55...+150 °C
95 W
0.4...0.6 Nm
2
g
Symbol Conditions
Characteristic Values
typ. max.
I_R 
V_F ‚
R_thJC
R_thCH
t_rr
V_R = V_RRM
V_R = V_RRM
I_F = 15 A

I_F = 1 A; V_R = 30 V;
-di/dt = 100 A/µs
T_VJ = 25°C
T_VJ = 150°C
T_VJ = 150°C
T_VJ = 25°C
T_VJ = 25°C
100 µA
0.5 mA
2.20 V
3.25 V
1.6 K/W
0.5
K/W
35
ns
I_RM
I_F = 25 A; V_R = 100 V;
-di_F/dt = 100 A/µs
T_VJ = 25°C 3.7
A
Pulse test:  Pulse Width = 5 ms, Duty Cycle < 2.0%
‚­Pulse Width = 300 µs, Duty Cycle < 2.0%
C
Data according to IEC 60747 and per diode
QL
unless otherwise specified.
TO-220 AC
C
A

C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Features
• International standard package
• Planar passivated chips
• Very short recovery time
• Extremely low switching losses
• Low I_RM-values
• Soft recovery behaviour
• Epoxy meets UL 94V-0
Applications
• Antiparallel diode for high frequency
switching devices
• Antisaturation diode
• Snubber diode
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Advantages
• Avalanche voltage rated for reliable
operation
• Soft reverse recovery for low EMI/RFI
• Low I_RM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
G
J
N
K
M
IXYS reserves the right to change limits, test conditions and dimensions.
© 2008 IXYS All rights reserved
20080416a
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