DSEI30-10A Datasheet, PDF (1/2 Pages) IXYS Corporation – Fast Recovery Epitaxial Diode (FRED)

Fast Recovery
Epitaxial Diode (FRED)
DSEI 30
I_FAVM = 30 A
V_RRM = 1000 V
t_rr = 35 ns
V_RSM
V
1000
Symbol
I_FRMS
I_FAVM ¬
I_FRM
I_FSM
∫i²dt
T_VJ
T_VJM
T
stg
P
tot
M_d
Weight
Symbol
I
R
V_F
V
T0
r
T
R_thJC
R_thCK
R_thJA
t
rr
I
RM
V_RRM
V
1000
Type
DSEI 30-10A
A
C
Test Conditions
T_VJ = T_VJM
T_C = 85°C; rectangular, d = 0.5
t_P < 10 µs; rep. rating, pulse width limited by T_VJM
T_VJ = 45°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_VJ = 150°C; t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T_VJ = 45°C t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
VJ
=
150°C;
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
T
C
=
25°C
Mounting torque with screw M3
Mounting torque with screw M3.5
Maximum Ratings
70
30
375
200
210
185
195
200
180
170
160
-40...+150
150
-40...+150
138
0.45/4
0.55/5
6
A
A
A
A
A
A
A
A²s
A²s
A²s
A²s
°C
°C
°C
W
Nm/lb.in.
Nm/lb.in.
g
Test Conditions
Characteristic Values
typ.
max.
T
VJ
=
25°C
T
VJ
=
25°C
T_VJ = 125°C
V =V
R
RRM
V = 0.8 • V
R
RRM
V_R = 0.8 • V_RRM
I_F = 30 A;
T_VJ = 150°C
T_VJ = 25°C
For power-loss calculations only
T =T
VJ
VJM
0.25
I
F
=
1
A;
-di/dt
=
100
A/µs;
V
R
=
30
V;
T
VJ
=
25°C
35
V = 540 V;
R
I
F
=
30
A;
-di /dt
F
=
240
A/µs
16
L ≤ 0.05 µH; T_VJ = 100°C
750
250
7
2
2.4
1.5
12.5
0.9
35
50
18
µA
µA
mA
V
V
V
mΩ
K/W
K/W
K/W
ns
A
TO-247 AD
C
C
A
A = Anode, C = Cathode
Features
l _{International standard package}
JEDEC TO-247 AD
l _{Planar passivated chips}
l _{Very short recovery time}
l _{Extremely low switching losses}
l _{Low I -values}
RM
l _{Soft recovery behaviour}
l _{Epoxy meet UL 94V-0}
Applications
l _{Antiparallel diode for high frequency}
switching devices
l _{Anti saturation diode}
l _{Snubber diode}
l _{Free wheeling diode in converters}
and motor control circuits
l _{Rectifiers in switch mode power}
supplies (SMPS)
l _{Inductive heating and melting}
l _{Uninterruptible power supplies (UPS)}
l _{Ultrasonic cleaners and welders}
Advantages
l _{High reliability circuit operation}
l _{Low voltage peaks for reduced}
protection circuits
l _{Low noise switching}
l _{Low losses}
l _{Operating at lower temperature or}
space saving by reduced cooling
¬ I_FAVM rating includes reverse blocking losses at T_VJM, V_R = 0.8 V_RRM, duty cycle d = 0.5
Data according to DIN/IEC 747
IXYS reserves the right to change limits, test conditions and dimensions
© 1997 IXYS All rights reserved
93021B
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