DSEE6-06CC Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerDynFREDTM Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface

ADVANCE TECHNICAL INFORMATION
DSEE 6-06CC
HiPerDynFRED^TM Epitaxial Diode
ISOPLUS220^TM
Electrically Isolated Back Surface
I_FAV = 6 A
V_RRM = 600 V
t_rr = 20 ns
V_RRMc
V
600
V_RRM
V
300
Type
DSEE 6-06CC
ISOPLUS 220
E153432
1
2
3
Symbol
I_FRMS
I_FAVM
E_AS
I_AR
T_VJ
T_VJM
T_stg
P_tot
V_ISOL
F_C
Weight
Conditions
T_C = 150°C; rectangular, d = 0.5
T_VJ = 25°C; non-repetitive
I_AS = 0.8 A; L = 180 µH
V_A = 1.5·V_R typ.; f = 10 kHz; repetitive
T_C = 25°C
50/60 Hz RMS; I_ISOL ≤ 1 mA
Mounting force
typical
Maximum Ratings
20
A
6
A
0.1
mJ
0.1
A
-40...+175
°C
175
°C
-40...+150
°C
50
W
2500
V~
11...65 / 2.4...11 N / lb
2
g
Symbol
I_R c
V_F e
R_thJC
R_thCH
t_rr
I_RM
Conditions
T_VJ = 25°C V_R = V_RRM
T_VJ = 150°C V_R = V_RRM
I_F = 10 A;
T_VJ = 125°C
T_VJ = 25°C
I_F = 1 A; -di/dt = 50 A/µs;
V_R = 30 V; T_VJ = 25°C
V_R = 100 V; I_F = 10 A; -di_F/dt = 100 A/µs
T_VJ = 100°C
Characteristic Values
typ. max.
25
µA
0.2
mA
1.35
V
1.8
V
3.0
K/W
0.6
K/W
20
ns
2
A
Notes: Data given for T_VJ = 25^OC and per diode unless otherwise specified
c Diodes connected in series
d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
Isolated back surface*
Features
λ _{Silicon chip on Direct-Copper-Bond}
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
λ _{Low cathode to tab capacitance (<15pF)}
λ _{Planar passivated chips}
λ _{Very short recovery time}
λ _{Extremely low switching losses}
λ _{Low IRM-values}
λ _{Soft recovery behaviour}
λ _{Epoxy meets UL 94V-0}
Applications
λ _{Antiparallel diode for high frequency}
switching devices
λ _{Antisaturation diode}
λ _{Snubber diode}
λ _{Free wheeling diode in converters}
and motor control circuits
λ _{Rectifiers in switch mode power}
supplies (SMPS)
λ _{Inductive heating}
λ _{Uninterruptible power supplies (UPS)}
λ _{Ultrasonic cleaners and welders}
Advantages
λ _{Avalanche voltage rated for reliable}
operation
λ _{Soft reverse recovery for low EMI/RFI}
λ _{Low IRM reduces:}
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
DS98915B(07/03)