DSEE30-12A Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerFRED Epitaxial Diode

ADVANCE TECHNICAL INFORMATION
DSEE30-12A
HiPerFRED^TM Epitaxial Diode
I_FAV =
V_RRM =
t_rr
=
30 A
1200 V^c
30 ns
V_RRMc
V
1200
V_RRM
V
600
Type
DSEE30-12A
1
2
3
TO-247 AD
1
2
3
Symbol
I_FRMS
I_FAVM c
I_FSM
E_AS
I_AR
T_VJ
T_VJM
T_stg
T_L
P_tot
M_d
Weight
Conditions
T_C = 90°C; rectangular, d = 0.5
T_VJ = 45°C; t_p = 10 ms (50 Hz), sine
T_VJ = 25°C; non-repetitive
I_AS = 1.3 A; L = 180 µH
V_A = 1.5· V_R typ.; f = 10 kHz; repetitive
1.6 mm (0.063 in) from case for 10 s
T_C = 25°C
Mounting Torque
typical
Maximum Ratings
60
A
30
A
200
A
0.2
mJ
0.1
A
-55...+175
°C
175
°C
-55...+150
°C
260
°C
165
W
0.9/6 Nm/ lb.in.
2
g
Symbol
I_R^cd
V_F ^e
R_thJC
R_thCH
t_rr
I_RM
Conditions
T_VJ = 25°C V_R = V_RRM
T_VJ = 150°C V_R = V_RRM
I_F = 30 A; T_VJ = 125°C
T_VJ = 25°C
I_F = 1 A; -di/dt = 200 A/µs;
V_R = 30 V
V_R = 100 V; I_F = 50 A; -di_F/dt = 100 A/µs
T_VJ = 100°C
Characteristic Values
typ.
max.
200
µA
2
mA
1.75
V
2.5
V
0.9
K/W
0.25
K/W
30
ns
4
A
Notes: Data given for T_VJ = 25^OC and per diode unless otherwise specified
c Diodes connected in series
d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
Features
● _{Planar passivated chips}
● _{Very short recovery time}
● _{Extremely low switching losses}
● _{Low IRM-values}
● _{Soft recovery behaviour}
● _{Epoxy meets UL 94V-0}
Applications
● _{Antiparallel diode for high frequency}
switching devices
● _{Antisaturation diode}
● _{Snubber diode}
● _{Free wheeling diode in converters}
and motor control circuits
● _{Rectifiers in switch mode power}
supplies (SMPS)
● _{Inductive heating}
● _{Uninterruptible power supplies (UPS)}
● _{Ultrasonic cleaners and welders}
Advantages
● _{Avalanche voltage rated for reliable}
operation
● _{Soft reverse recovery for low EMI/RFI}
● _{Low IRM reduces:}
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Notes
● _{Please see DSEP 30-06A Data Sheet}
for characteristic curves.
IXYS reserves the right to change limits, test conditions and dimensions.
© 2002 IXYS All rights reserved
DS98962 (10/02)