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DSEE15-12CC Datasheet, PDF (1/2 Pages) IXYS Corporation – HiPerDynFREDTM Epitaxial Diode ISOPLUS220 (15A, 1200V, 35ns)
ADVANCE TECHNICAL INFORMATION
DSEE15-12CC
HiPerDynFREDTM Epitaxial Diode
ISOPLUS220TM
Electrically Isolated Back Surface
IFAV =
VRRM =
trr =
15 A
1200 Vc
35 ns
VRRMc
V
1200
VRRM
V
600
Type
DSEE15-12CC
1
2
3
ISOPLUS 220
E153432
Symbol
IFRMS
IFAVMc
IFSM
EAS
IAR
TVJ
TVJM
Tstg
TL
Ptot
VISOL
FC
Weight
Conditions
TC = 100°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
1.6 mm (0.063 in) from case for 10 s
TC = 25°C
50/60 Hz RMS; IISOL ≤ 1 mA
Mounting force
typical
Maximum Ratings
35
A
15
A
110
A
0.2
mJ
0.1
A
-55...+175
°C
175
°C
-55...+150
°C
260
°C
95
W
2500
V~
11...65 / 2.5...15 N / lb
2
g
Symbol
Conditions
Characteristic Values
typ. max.
IRd
VF
RthJC
RthCH
trr
IRM
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRMe
IF = 15 A;
TVJ = 125°C
TVJ = 25°C
IF = 1 A; -di/dt = 200 A/µs;
VR = 30 V
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs
TVJ = 100°C
100
0.5
1.5
2.05
1.6
0.6
35
4
4.9
µA
mA
V
V
K/W
K/W
ns
A
Notes: Data given for TVJ = 25OC and per diode unless otherwise specified
c Diodes connected in series
d Pulse test: pulse Width = 5 ms, Duty Cycle < 2.0 %
e Pulse test: pulse Width = 300 µs, Duty Cycle < 2.0 %
Isolated back surface*
Features
z Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
z Low cathode to tab capacitance (<15pF)
z Planar passivated chips
z Very short recovery time
z Extremely low switching losses
z Low IRM-values
z Soft recovery behaviour
z Epoxy meets UL 94V-0
Applications
z Antiparallel diode for high frequency
switching devices
z Antisaturation diode
z Snubber diode
z Free wheeling diode in converters
and motor control circuits
z Rectifiers in switch mode power
supplies (SMPS)
z Inductive heating
z Uninterruptible power supplies (UPS)
z Ultrasonic cleaners and welders
Advantages
z Avalanche voltage rated for reliable
operation
z Soft reverse recovery for low EMI/RFI
z Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
© 2003 IXYS All rights reserved
IXYS reserves the right to change limits, test conditions and dimensions.
DS98816A(07/03)