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DSEC60-06A Datasheet, PDF (1/3 Pages) IXYS Corporation – HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
DSEC 60-06A
DSEC 60-06B
IFAV = 2x 30 A
VRRM = 600 V
trr = 30/35 ns
VRSM
V
600
600
VRRM
V
600
600
Type
DSEC 60-06A
DSEC 60-06B
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
Md
Weight
Conditions
rect., d = 0.5; TC (Vers. A) = 135°C
TC (Vers. B) = 125°C
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 1.3 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
mounting torque
typical
A
C
A
Both Versions
Maximum Ratings
70
A
30
A
250
A
0.2
mJ
0.1
A
-55...+175
°C
175
°C
-55...+150
°C
165
W
0.8...1.2
Nm
6
g
Symbol
IR x
VF y
RthJC
RthCH
trr
IRM
Conditions
Characteristic max. Values
Vers. A Vers. B
TVJ = 25°C VR = VRRM
TVJ = 150°C VR = VRRM
IF = 30 A; TVJ = 150°C
TVJ = 25°C
250 250
mA
1
2 mA
1.25 1.56
V
1.60 2.51
V
0.9
0.9 K/W
0.25 0.25 K/W
IF = 1 A; -di/dt = 200 A/ms;
VR = 30 V; TVJ = 25°C
typ. 35 typ. 30
ns
VR = 100 V; IF = 50 A; -diF/dt = 100 A/ms typ. 6 typ. 4
A
TVJ = 100°C
Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 %
y Pulse Width = 300 ms, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2000 IXYS All rights reserved
TO-247 AD
A
C
C (TAB)
A
A = Anode, C = Cathode, TAB = Cathode
Features
q International standard package
q Planar passivated chips
q Very short recovery time
q Extremely low switching losses
q Low IRM-values
q Soft recovery behaviour
q Epoxy meets UL 94V-0
Applications
q Antiparallel diode for high frequency
switching devices
q Antisaturation diode
q Snubber diode
q Free wheeling diode in converters
and motor control circuits
q Rectifiers in switch mode power
supplies (SMPS)
q Inductive heating
q Uninterruptible power supplies (UPS)
q Ultrasonic cleaners and welders
Advantages
q Avalanche voltage rated for reliable
operation
q Soft reverse recovery for low
EMI/RFI
q Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see outlines.pdf
1-3