DSEC30-04A Datasheet, PDF (1/1 Pages) IXYS Corporation – HiPerFRED Epitaxial Diode with common cathode and soft recovery

Advanced Technical Information
DSEC 30-04A
HiPerFRED^TM Epitaxial Diode
with common cathode and soft recovery
I_FAV = 2x15 A
V_RRM = 400 V
t_rr = 30 ns
V_RSM
V
400
V_RRM
V
400
Type
DSEC 30-04A
A
C
A
TO-247 AD
A
C
A
C (TAB)
A = Anode, C = Cathode, TAB = Cathode
Symbol
I_FRMS
I_FAVM
I_FSM
E_AS
I_AR
T_VJ
T_VJM
T_stg
P_tot
M_d
Weight
Conditions
T_C = 145°C; rectangular, d = 0.5
T_VJ = 45°C; t_p = 10 ms (50 Hz), sine
T_VJ = 25°C; non-repetitive
I_AS = tbd A; L = tbd µH
V_A = 1.5·V_R typ.; f = 10 kHz; repetitive
T_C = 25°C
mounting torque
typical
Maximum Ratings
50
A
15
A
tbd
A
tbd
mJ
tbd
A
-55...+175
°C
175
°C
-55...+150
°C
95
W
0.8...1.2
Nm
6
g
Symbol
I_R ①
V_F ②
R_thJC
R_thCH
t_rr
I_RM
Conditions
T_VJ = 25°C;
T_VJ = 150°C;
V_R = V_RRM
V_R = V_RRM
I_F = 15 A;
T_VJ = 150°C
T_VJ = 25°C
I_F = 1 A; -di/dt = 100 A/µs;
V_R = 30 V; T_VJ = 25°C
V_R = 100 V; I_F = 25 A; -di_F/dt = 100 A/µs
T_VJ = 100°C
Characteristic Values
typ. max.
100
µA
0.5
mA
1.06
V
1.47
V
1.6
K/W
0.25
K/W
30
ns
5.0
6.3
A
Pulse test: ① Pulse Width = 5 ms, Duty Cycle < 2.0 %
② Pulse Width = 300 µs, Duty Cycle < 2.0 %
Data according to IEC 60747 and per diode unless otherwise specified
IXYS reserves the right to change limits, test conditions and dimensions.
© 2001 IXYS All rights reserved
Features
● _{International standard package}
● _{Planar passivated chips}
● _{Very short recovery time}
● _{Extremely low switching losses}
● _{Low IRM-values}
● _{Soft recovery behaviour}
● _{Epoxy meets UL 94V-0}
Applications
● _{Antiparallel diode for high frequency}
switching devices
● _{Antisaturation diode}
● _{Snubber diode}
● _{Free wheeling diode in converters}
and motor control circuits
● _{Rectifiers in switch mode power}
supplies (SMPS)
● _{Inductive heating}
● _{Uninterruptible power supplies (UPS)}
● _{Ultrasonic cleaners and welders}
Advantages
● _{Avalanche voltage rated for reliable}
operation
● _{Soft reverse recovery for low}
EMI/RFI
● _{Low IRM reduces:}
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see pages IXYS Data Book
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