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DSEC16-04AS Datasheet, PDF (1/1 Pages) IXYS Corporation – HiPerFREDTM Epitaxial Diode with common cathode and soft recovery
DSEC 16-04AS
HiPerFREDTM Epitaxial Diode
with common cathode and soft recovery
Preliminary Data
VRSM
V
400
VRRM
V
400
Type
DSEC 16-04AS
A
C
A
IFAV = 2x 10 A
VRRM = 400 V
trr = 30 ns
TO-263 AB
A
A
C (TAB)
Symbol
IFRMS
IFAVM
IFSM
EAS
IAR
TVJ
TVJM
Tstg
Ptot
Weight
Symbol
IR ①
VF ②
RthJC
trr
IRM
Conditions
TC = 140°C; rectangular, d = 0.5
TVJ = 45°C; tp = 10 ms (50 Hz), sine
TVJ = 25°C; non-repetitive
IAS = 2 A; L = 180 µH
VA = 1.5·VR typ.; f = 10 kHz; repetitive
TC = 25°C
typical
Conditions
TVJ = 25°C; VR = VRRM
TVJ = 150°C; VR = VRRM
IF = 10 A;
TVJ = 150°C
TVJ = 25°C
IF = 1 A; -di/dt = 100 A/µs;
VR = 30 V; TVJ = 25°C
VR = 100 V; IF = 25 A; -diF/dt = 100 A/µs
TVJ = 100°C
Maximum Ratings
35
A
10
A
60
A
0.5
mJ
0.2
A
-55...+175
°C
175
°C
-55...+150
°C
60
W
2
g
Characteristic Values
typ. max.
60
µA
0.25 mA
1.12
V
1.53
V
2.5 K/W
30
ns
2
2.4
A
Features
● International standard package
● Planar passivated chips
● Very short recovery time
● Extremely low switching losses
● Low IRM-values
● Soft recovery behaviour
● Epoxy meets UL 94V-0
Applications
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode in converters
and motor control circuits
● Rectifiers in switch mode power
supplies (SMPS)
● Inductive heating
● Uninterruptible power supplies (UPS)
● Ultrasonic cleaners and welders
Advantages
● Avalanche voltage rated for reliable
operation
● Soft reverse recovery for low
EMI/RFI
● Low IRM reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating
switch
Dimensions see IXYS Databook 2001
IXYS reserves the right to change limits, Conditions and dimensions.
© 2002 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15, D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-1
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670